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2D h-BN Nanosheets as an Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-emitting Diodes
Device Fabrication and Physics | 更新时间：2026-04-14

    • 2D h-BN Nanosheets as an Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-emitting Diodes

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    • Chinese Journal of Luminescence   Vol. 47, Issue 1, Pages: 124-132(2026)

    • DOI：10.37188/CJL.20250220    

      CLC： TN312.8
    • CSTR：32170.14.CJL.20250220    

    • Received：23 September 2025，

      Revised：2025-10-13，

      Published：25 January 2026

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  • WANG Ning,ZHANG Yu,YANG Suwen,et al.2D h-BN Nanosheets as an Efficient Electron Blocking Layer for Enhanced Performance of Quantum Dot Light-emitting Diodes[J].Chinese Journal of Luminescence,2026,47(01):124-132. DOI： 10.37188/CJL.20250220. CSTR： 32170.14.CJL.20250220.

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Related Author

WANG Ning
ZHANG Yu
YANG Suwen
HU Yufeng
LOU Zhidong
HOU Yanbing
TENG Feng
PANG Keyi

Related Institution

Key Laboratory of Luminescence and Optical Information， Ministry of Education， School of Physical Science and Engineering， Beijing Jiaotong University
School of Physical Science and Technology， Guangxi University
Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences
Research and Development Center for Wide Bandgap Semiconductors， Institute of Semiconductors， Chinese Academy of Sciences
Shanxi Key Lab of Photovoltaic Technology and Application， Key Lab of New Sensors and Intelligent Control of Ministry of Education， College of Physics and Optoelectronics， Taiyuan University of Technology
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