Investigation on Polarization-Dependent Strain Quantum Well Gain Chips
|更新时间:2025-05-22
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Investigation on Polarization-Dependent Strain Quantum Well Gain Chips
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“The latest research reveals the key role of semiconductor gain chips in quantum precision measurement and other fields, significantly improving polarization extinction ratio and output power by optimizing quantum well thickness and strain.”
the National Key Research & Development Program of China(2023YFB2805500);National Natural Science Foundation of China(62374164;U23A20355);Science and Technology Development Project of Jilin Province(20220201063GX;20240201001GX;20240601031RC);Changchun Science and Technology Development Plan Project(22SH01);Chinese Academy of Engineering cooperation project(JL2024-02)
DUAN Yijiang,CHEN Chao,SUN Jingjing,et al.Investigation on Polarization-Dependent Strain Quantum Well Gain Chips[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20250114 CSTR: 32170.14.CJL.20250114.
Investigation on Polarization-Dependent Strain Quantum Well Gain Chips增强出版
Daheng College, University of Chinese Academy of Sciences
Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
BMW Brilliance Automobile Co.,Ltd.
School of Electrical and Automation Engineering, Liaoning Institute of Science and Technology