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Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer
Device Fabrication and Physics | 更新时间：2026-09-12

    • Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer

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    • Chinese Journal of Luminescence   Vol. 45, Issue 12, Pages: 2037-2044(2024)

    • DOI：10.37188/CJL.20240299    

      CLC： TN312.8

    • Received：14 November 2024，

      Revised：2024-11-21，

      Published：25 December 2024

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  • JI Zeting,DENG Gaoqiang,WANG Yusen,et al.Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer[J].Chinese Journal of Luminescence,2024,45(12):2037-2044. DOI： 10.37188/CJL.20240299.

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Related Author

JI Zeting
DENG Gaoqiang
WANG Yusen
YU Jiaqi
ZUO Changcai
GAO Haozhe
ZHANG Baolin
ZHANG Yuantao

Related Institution

State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University
State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University
Tan Kah Kee Innovation Laboratory， Future Display Institue of Xiamen
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices， Ministry of Education， Fujian Key Laboratory of Semiconductor Materials and Applications， CI Center for OSED， Department of Physics， Xiamen University
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