您当前的位置：
首页 >
文章列表页 >
Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates
Synthesis and Properties of Materials | 更新时间：2026-09-12

    • Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates

      增强出版
    • Chinese Journal of Luminescence   Vol. 45, Issue 10, Pages: 1639-1646(2024)

    • DOI：10.37188/CJL.20240199    

      CLC： O482.31

    • Received：27 August 2024，

      Revised：2024-09-02，

      Published：26 October 2024

    移动端阅览

  • ZHANG Zhihong,MENG Bingheng,WANG Shuangpeng,et al.Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates[J].Chinese Journal of Luminescence,2024,45(10):1639-1646. DOI： 10.37188/CJL.20240199.

  •  
  •  

0

Views

887

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Rare-earth Sulfides with Strong Covalency and Low Phonon Energy: Unlocking Efficient and Stable Cr3+ Short-wave Infrared Emission
Chiral Organic Afterglow Materials with Circularly Polarized Luminescence
Research Progress on Linewidth Compression Technology of Visible Light Band Lasers
Chiral BODIPY Circularly Polarized Luminescence Materials: Molecular Design and Applications
Trimodal Synergistic Nanocomposites with Cascade Nanozyme Activity: Toward Potentially NIR-responsive Switching Imaging and Therapy

Related Author

ZHANG Zhihong
MENG Bingheng
WANG Shuangpeng
KANG Yubin
WEI Zhipeng

Related Institution

State Key Laboratory of High Power Semiconductor Lasers， Changchun University of Science and Technology
Instituted of Applied Physics and Materials Engineering， University of Macau， Taipa 999078， Macau SAR
College of Optics and Electronic Science and Technology， China Jiliang University
0