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Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits
Device Fabrication and Physics | 更新时间：2024-09-25
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    • Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits

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    • “New progress has been made in improving the hole injection efficiency of GaN based LEDs. Researchers have designed new epitaxial structures and found that the carrier transport mechanism and V-pit defects have a significant impact on efficiency.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 5, Pages: 800-808(2024)

    • DOI：10.37188/CJL.20240027    

      CLC： TN383+.1

    • Published：25 May 2024，

      Received：31 January 2024，

      Revised：15 February 2024，

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  • ZHANG Donghao,YANG Dongkai,XU Chang,et al.Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits[J].Chinese Journal of Luminescence,2024,45(05):800-808. DOI： 10.37188/CJL.20240027.

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ZHANG Donghao
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School of Electronic Science and Engineering， Department of Electronic Science， Xiamen University
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