您当前的位置：
首页 >
文章列表页 >
Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits
Device Fabrication and Physics | 更新时间：2024-07-10
|

    • Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits

      增强出版
    • “最新研究揭示了提升GaN基多量子阱LED空穴注入效率的机制，通过优化最后势垒层结构，增强了载流子传输，为LED技术发展提供了新思路。”
      ”
    • Chinese Journal of Luminescence   Vol. 45, Issue 5, Pages: 800-808(2024)

    • DOI：10.37188/CJL.20240027    

      CLC： TN383+.1

    • Published：25 May 2024，

      Received：31 January 2024，

      Revised：15 February 2024，

    扫 描 看 全 文

  • ZHANG Donghao,YANG Dongkai,XU Chang,et al.Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits[J].Chinese Journal of Luminescence,2024,45(05):800-808. DOI： 10.37188/CJL.20240027.

  •  
  •  

0

Views

69

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Temperature-dependent Carrier Leakage in InGaN/GaN Multiple Quantum Wells Light-emitting Diodes
Green Light-emitting Diodes Based on Sorbitol-passivated Perovskite Polycrystalline Films
Research Progress of Transparent Light-emitting Diodes
Boosting Performance of Blue Quantum-dot Light-emitting Diodes by Ti3C2Tx doped PEDOT∶PSS

Related Author

ZHANG Donghao
YANG Dongkai
XU Chang
LIU Hsin-Yu
BAO Lijun
LIU Shi-tao
WANG Li
WU Fei-fei

Related Institution

School of Electronic Science and Engineering， Department of Electronic Science， Xiamen University
College of Material Science and Engineering, Nanchang University
National Engineering Research Center on Si Substrate, Nanchang University
College of Photovoltaic, Nanchang University
Key Laboratory of Interface Science and Engineering in Advanced Materials， Ministry of Education， Taiyuan University of Technology
0