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Quantum-dot Light-emitting Diodes Based on MoO3/ZnO Inorganic Charge-generation Layer
Cover Story | 更新时间:2023-11-27
    • Quantum-dot Light-emitting Diodes Based on MoO3/ZnO Inorganic Charge-generation Layer

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    • Chinese Journal of Luminescence   Vol. 44, Issue 11, Pages: 1885-1893(2023)
    • DOI:10.37188/CJL.20230198    

      CLC: TN383.1;O482.31
    • Published:05 November 2023

      Received:01 September 2023

      Revised:17 September 2023

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  • MEI Kaiyuan,HUO Siming,YU Rongmei,et al.Quantum-dot Light-emitting Diodes Based on MoO3/ZnO Inorganic Charge-generation Layer[J].Chinese Journal of Luminescence,2023,44(11):1885-1893. DOI: 10.37188/CJL.20230198.

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