Effect of Orderliness of In<sub>0.49</sub>Ga<sub>0.51</sub>P Material on Luminescence Characteristics

LIU Wei-chao; WANG Hai-zhu; WANG Jia-bin; WANG Qu-hui; FAN Jie; ZOU Yong-gang; MA Xiao-hui

doi:10.37188/CJL.20220059

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Effect of Orderliness of In_0.49Ga_0.51P Material on Luminescence Characteristics

Synthesis and Properties of Materials | 更新时间：2022-10-19

- Effect of Orderliness of In_0.49Ga_0.51P Material on Luminescence Characteristics
  增强出版
- Chinese Journal of Luminescence Vol. 43, Issue 6, Pages: 862-868(2022)
- 作者机构：
  
  1.长春理工大学高功率半导体国家重点实验室，吉林长春　130022
  2.长春理工大学重庆研究院，重庆　401135
- 作者简介：
- 基金信息：
  
  Science and Technology Development Plan of Jilin Province(20210201089GX);Natural Science Foundation of Chongqing(cstc2021jcyj-msxmX1060)
- DOI：10.37188/CJL.20220059
  CLC： O482.31
- Published：05 June 2022，
  
  Received：01 March 2022，
  
  Revised：20 March 2022，
- 稿件说明：
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刘伟超,王海珠,王嘉宾等.In_0.49Ga_0.51P材料有序度对发光特性的影响[J].发光学报,2022,43(06):862-868.

LIU Wei-chao,WANG Hai-zhu,WANG Jia-bin,et al.Effect of Orderliness of In_0.49Ga_0.51P Material on Luminescence Characteristics[J].Chinese Journal of Luminescence,2022,43(06):862-868.
刘伟超,王海珠,王嘉宾等.In_0.49Ga_0.51P材料有序度对发光特性的影响[J].发光学报,2022,43(06):862-868. DOI： 10.37188/CJL.20220059.

LIU Wei-chao,WANG Hai-zhu,WANG Jia-bin,et al.Effect of Orderliness of In_0.49Ga_0.51P Material on Luminescence Characteristics[J].Chinese Journal of Luminescence,2022,43(06):862-868. DOI： 10.37188/CJL.20220059.

摘要

0.49

0.51

P材料因与GaAs晶格匹配且具有较宽的能量带隙，在GaAs基短波长激光器和无铝激光器等研究方向上受到了广泛关注。不同领域的应用对In

0.49

0.51

P材料的性能提出了不同的需求，导致In

0.49

0.51

P材料的有序度发生变化，进而导致其发光特性发生改变。本文利用金属有机化学气相沉积（MOCVD）技术，在半绝缘的GaAs衬底上开展In

0.49

0.51

P材料有序度对其发光特性影响的研究。通过改变硅烷（SiH

）和二乙基锌（DEZn）掺杂剂的掺杂流量和Ⅴ/Ⅲ比的方法来改变In

0.49

0.51

P材料的有序度。室温光致发光测试（PL）和低温PL测试结果表明，两种掺杂剂掺杂流量增加都会导致In

0.49

0.51

P有序度降低，从而使InGaP的发光波长蓝移。此外，Ⅴ/Ⅲ比增加会导致In

0.49

0.51

P有序度增加，使样品的发光波长红移。

Abstract

The In

0.49

0.51

P material， as a semiconductor material with broad energy bandgap and matching lattice parameters with GaAs， has obtained widespread attention and application， such as GaAs-based short-wavelength lasers and aluminum-free lasers. Aiming on its applications in different fields， different demands are proposed on the properties of In

0.49

0.51

P materials， which lead to changes in the orderliness of In

0.49

0.51

P， and then， its luminescence properties. In this paper， the luminescence-characteristics effect of the orderliness of In

0.49

0.51

P material on semi-insulated GaAs substrate was studied using metal organic chemical vapour deposition（MOCVD） technology. The doping flux of SiH

and DEZn and the change of Ⅴ/Ⅲ ratio can affect the ordering of In

0.49

0.51

P material. The results of room temperature PL test and low temperature PL test show that the increase of the doping flux of the two dopants can lead to the decrease of the order degree of In

0.49

0.51

P， thus causing the blue-shift of the emission wavelength of InGaP. In addition， the increase of Ⅴ/Ⅲ ratio leads to the increase of the orderess of In

0.49

0.51

P， which leads to the red shift of the luminescence wavelength of the sample.

关键词

金属有机化学气相沉积铟镓磷/镓砷光致发光故意掺杂

Keywords

metal organic chemical vapour deposition（MOCVD）InGaP/GaAsphotoluminescenceintentional doping

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⁰

Effect of Orderliness of In0.49Ga0.51P Material on Luminescence Characteristics

DOI：10.37188/CJL.20220059

摘要

Abstract

关键词

Keywords

references

Effect of Orderliness of In_0.49Ga_0.51P Material on Luminescence Characteristics