摘要:Color-tunable organic light-emitting devices (OLEDs) hold significant application potential in dynamic displays, anti-counterfeiting, and information encryption. In this work, a tandem-structured red-green color-tunable OLED is constructed using Bphen∶Mg as the n-doped charge generation layer (CGL). The effects of Mg and Ag doping on carrier injection and recombination behavior in the CGL are systematically investigated. Although Mg doping results in a lower current density, it yields a higher external quantum efficiency (16.9%), which is more favorable for efficient luminescence. By adjusting the stacking order of the red and green emitting layers, the device with a green-bottom/red-top configuration exhibits pronounced voltage-dependent color tunability. Its CIE coordinates shift from (0.61, 0.39) at 7 V to (0.47, 0.48) at 19 V, a change that extends beyond the five-step MacAdam ellipse range, ensuring good visual discernibility. Based on this structure, a patterned anti-counterfeiting label is further fabricated, demonstrating dynamic switching between a red pattern at low voltage and a yellow-green background at high voltage, thereby verifying its feasibility for multi-level visual anti-counterfeiting and information encryption. This study provides experimental support for the design and anti-counterfeiting applications of high-performance color-tunable tandem OLEDs.
摘要:Flexible mechanoluminescent (ML) materials hold significant promise for applications in wearable optoelectronics and intelligent sensing. However, conventional materials are largely limited to visible and near-infrared emissions and often require pre-irradiation activation, which restricts their operational stability in complex environments. Recently, Lv et al. reported a pioneering development of a solar-blind deep-ultraviolet (UVC) ML elastomer (Sr3(BO3)2∶Pr3+/PDMS) driven by interfacial triboelectrification. This material integrates self-powering and self-recovery capabilities with exceptional cyclic stability. Without the necessity of pre-irradiation, the elastomer emits solar-blind UVC light peaked at 272 nm upon mechanical stimulation. The elastomer film exhibits excellent optical stability over 10 000 stretching cycles, and its luminescence intensity can recover to 90.2% of the initial value after a 24-hour resting period. This work not only extends the spectral range of ML into the solar-blind ultraviolet region but also provides new strategies for background-free optical tagging and self-powered microbial sterilization applications.
摘要:X-ray imaging plays a vital role in nuclear medical diagnostics, industrial non-destructive inspection, and security inspection, where high-performance scintillators serve as the core materials for efficient X-ray detection and imaging. Developing new scintillator crystals that combine high absorption efficiency, high light yield, fast decay time, and low detection limit is a key challenge for improving imaging quality and reducing radiation dose. In this work, Cs3Lu2Cl9 crystals doped with various Ce3+ concentrations were successfully prepared by the Bridgeman method, and their photoluminescence and scintillation properties were systematically investigated. The undoped crystal exhibits intrinsic broad-band luminescence originating from self-trapped excitons (STE). Ce3+ doping significantly enhances the X-ray excited luminescence intensity. Among them, the Cs3Lu2Cl9∶5%Ce crystal exhibits the best overall scintillation performance. It shows a radioluminescence (RL) emission peak at 425 nm and achieves a steady-state X-ray light yield of 20 700 photons·MeV-1, which is seven times higher than that of the undoped sample. Its scintillation decay time is 36.5 ns. Furthermore, this crystal achieves a low X-ray detection limit of 152 nGyair·s-1 and a high spatial resolution of 14.5 lp·mm-1. This work elucidates the mechanism by which Ce3+ synergistically enhances STE luminescence efficiency in Cs3Lu2Cl9, achieved by suppressing non-radiative recombination and facilitating energy transfer. It thus confirms the great potential of Cs3Lu2Cl9∶5%Ce as a high-performance, fast-response X-ray scintillator for low-dose, high-resolution imaging applications.
摘要:Fe3+-doped near-infrared luminescent materials have drawn increasing attention due to their tunable broadband emission, excellent biocompatibility and low toxicity, demonstrating promising applications in bioimaging and nondestructive testing. Understanding the structure-property relationship between crystal structure and luminescence performance, along with optimization strategies, is crucial for developing novel high-efficiency Fe3+-doped materials. This review summarizes recent advances in Fe3+-doped NIR luminescent materials. Using Tanabe-Sugano diagrams, we analyze the luminescence mechanisms of Fe3+ in both octahedral and tetrahedral coordination environments. A systematic comparison of materials reported in the past five years is presented, focusing on their luminescence properties, optimization approaches and application fields. Finally, we discuss current challenges and future prospects to provide valuable insights for understanding emission mechanisms and developing high-performance Fe3+-doped NIR luminescent materials.
摘要:High-brightness edge-emitting semiconductor lasers, with advantages such as high electro-optical conversion efficiency, high beam quality, and high peak power, have been widely applied in various fields, including material processing, medical treatment, and light detection and ranging (LiDAR). However, it remains challenging to achieve edge-emitting lasers with both high output power and high beam quality, and this challenge has become a research focus in the field of high-brightness edge-emitting semiconductor lasers. First, this paper systematically summarizes the research progress of high-power and high-beam-quality edge-emitting semiconductor lasers both domestically and internationally in recent years, outlines the methods for lateral mode control and vertical far-field divergence angle optimization of such lasers. Second, it presents the pulsed driving technology, which helps alleviate thermal accumulation in the active region, achieve high peak power output, and thereby enable high-brightness operation of the device. The brightness of the multi-active-region tunnel junction lasers can reach 300 MW·cm-2·sr-1 at a peak power of 100 W. The High-brightness vertical broad-area edge-emitting (HiBBEE) laser can reduce the vertical far-field divergence angle, further improving the coupling efficiency of the optical system and lowering the cost of collimating and focusing lenses. Finally, combined with the current development status and future requirements of driving technologies and high-brightness lasers, this paper provides an outlook on the realization of high-performance pulsed-driven high-brightness semiconductor lasers.
摘要:Mn⁴⁺-activated red-emitting fluoride phosphors are among the research hotspots for white light-emitting diodes (WLEDs). Their macroscopic crystal forms demonstrate pronounced advantages in hydrolytic resistance, thermal quenching, and quantum efficiency. This review summarizes the representative systems, synthetic protocols and photoluminescence properties of Mn4+-activated fluoride crystals. The solvent evaporation, host-crystal synthesis followed by ion exchange, solvent exchange, fluoride-phase transformation and cooling crystallization are compared in detail, and their respective merits and limitations are highlighted. Key challenges that remain to be addressed during crystals growth are discussed, including stabilization of the Mn4+ valence state, regulation of fluoride host solubility, and the requirement for environmentally benign processes. Finally, future application prospects are outlined, with the aim of accelerating the development of high-performance Mn4+-activated red-emitting fluoride crystals.
摘要:The development of color converters with high luminescence saturation thresholds presents a critical challenge for next-generation high-brightness laser lighting technology. In this work, a novel transmissive Y3Al5O12∶Ce3+ (YAG) phosphor-in-glass film (PiGF) featuring a double-sided sapphire sandwich structure (S@PiGF@S) was designed and fabricated via thermocompression sintering. This configuration significantly enhances tolerance to high laser power density through efficient dual-side heat dissipation and a “photothermal-decoupling” effect. Experimental results show that the optimized S@PiGF@S color converter achieves a luminous flux of 2 761 lm at 16.6 W·mm-², representing a 125.3% improvement over the conventional PiGF@sapphire structure (1 205 lm at 8.5 W·mm-²). More importantly, by incorporating a rotational dynamic cooling mechanism, the core temperature remains as low as 47 ℃ even under a laser power density of 18 W·mm-². These findings confirm that the S@PiGF@S converter exhibits outstanding opto-thermal performance, demonstrating great potential for applications in high-brightness laser lighting.
摘要:Compared with destructive mechanoluminescent (ML) materials, trap-controlled ML materials exhibit distinct advantages such as structural integrity and recoverable luminescence, showing great potential in stress visualization, anti-counterfeiting, and stress sensing. The development of high-performance trap-controlled ML materials is therefore of great significance for promoting the practical application of ML. In this work, a novel trap-controlled ML material Mg3Y2Ge3O12∶Tb3+ was successfully synthesized. Its structure, luminescent properties, and recoverable ML mechanism were systematically investigated through X-ray diffraction, scanning electron microscopy, excitation and emission spectroscopy, afterglow decay curves, afterglow spectroscopy, thermoluminescence spectra, ML spectroscopy, transient photon signal acquisition, and piezoresponse force microscopy. The results show that Mg3Y2Ge3O12∶Tb3+ exhibits high consistency emission spectra under photoluminescence, afterglow, and ML modes. The intense green emission primarily originates from the Tb3+5D4→7F5 transition. Thermoluminescence analysis indicates that the presence of broadly distributed carrier traps within the material plays a critical role in achieving long-lasting afterglow and recoverable ML. Cyclic friction experiments demonstrate a good linear relationship between ML intensity and applied mechanical pressure. Moreover, after luminescence decay, the ML intensity can be fully restored to its initial level through ultraviolet irradiation. Piezoresponse force microscopy measurements further confirm that mechanically induced localized piezoelectric effects serve as the key excitation mechanism for the recoverable ML behavior. This work not only expands the material systems available for high-performance recoverable ML materials but also provides important experimental evidence for understanding their luminescence mechanisms and potential applications.
摘要:SrAl2O4∶Eu2+ is one of the most outstanding mechanoluminescent (ML) materials and has attracted considerable interest for its applications in stress distribution sensing and structural health monitoring. A systematic investigation of its ML behavior and underlying mechanisms under different mechanical stimuli is essential for guiding practical application. In this study, SrAl2O4∶Eu2+ powders were embedded in an epoxy resin matrix to fabricate composite samples subjected to uniaxial compressive stress during compression-release cycles. The ML behavior during unloading after stress loading with different holding time was systematically investigated. The results show that no discernible ML is observed during unloading when the stress holding time is ≤2 s, whereas a pronounced ML peak appears during unloading when the holding time exceeds 2 s. This behavior can be attributed to a trap-mediated mechanism: during the stress-holding stage, the piezoelectric effect induces polarized charges on the grain surfaces, driving electrons to be captured by traps near the positively charged regions. With increasing holding time, these traps become progressively filled. Upon stress unloading, the rapid disappearance of the polarized charges triggers the release of trapped electrons, which subsequently recombine with luminescent centers, giving rise to mechanoluminescence during unloading. In contrast, insufficient trap filling at short holding time prevents observable ML emission. These findings reveal the characteristic stress-unloading ML behavior of SrAl2O4∶Eu2+ and its strong dependence on the stress holding time, providing important insights into the ML mechanism and guidance for its practical applications.
摘要:Scintillating glass, as a key material for high-energy radiation detection, shows significant application prospects in large-size, low-cost radiation detection systems. However, in high-Gd-content scintillating glasses, cross-relaxation among Gd3+ ions limits energy transfer efficiency, thereby restricting further improvement of luminescence performance. In this study, a high-temperature melting method was employed to synthesize Pr3+ and Ce3+ co-doped gadolinium-rich boron-aluminosilicate oxyfluoride glass (Gd2O3-GdF3-B2O3-Al2O3-SiO2-CeO2, referred to as CS glass) under a reducing atmosphere (CO). Using absorption, reflection, and luminescence spectroscopy, we systematically investigated the influence of Pr3+ doping on the optical and scintillation properties of Ce3+-doped scintillating glass, along with the energy transfer mechanisms among Pr3+, Ce3+ and Gd3+ rare-earth ions. The fluorescence intensity of this glass under X-ray excitation was compared with that of BGO crystal. Results demonstrate that low-concentration Pr3+ doping significantly enhances the luminescence intensity of CS glass excited at 275 nm, increasing the X-ray excited optical yield by 60%. A pronounced 5d-4f transition of Pr3+ was observed in low-Pr3+-doped CS glass, accompanied by Pr3+→Gd3+→Ce3+ and Gd3+→Pr3+ energy transfer. In glasses with higher Pr3+ concentrations, the 4f-4f transition of Pr3+ dominates, while Gd3+→Pr3+ energy transfer persists, resulting in prolonged fluorescence decay time for both Gd3+ and Ce3+.
摘要:Laser fluorescence display technology has shown broad application prospects in the field of laser display due to its advantages of low cost and speckle-free image quality. This technology imposes stringent requirements on phosphor materials, demanding the fluorescence lifetime of activator ions be as short as possible. The fluorescence lifetime of Ce3+ ions is generally on the nanosecond scale, but existing Ce3+-activated phosphors based on blue light excitation mostly exhibit emission concentrated in the blue-green to yellow spectral regions, with a scarcity of emission in the orange-red region. In this study, Y3Mg2AlSi2O12∶Ce3+ phosphors were synthesized via a high-temperature solid-state reaction method. Through systematic optimization of flux agents and sintering processes, the formation of apatite impurity phases was effectively suppressed, and pure-phase Y3Mg2AlSi2O12 was successfully prepared. This pure-phase phosphor demonstrates excellent optical performance: at room temperature, its luminescence intensity increased by approximately 150% compared to that before optimization, with internal and external quantum efficiencies reaching 78.73% and 49.07%, respectively. Furthermore, at 150 ℃, it retains 70.1% of its room-temperature emission intensity. To achieve a spectral redshift, this work employed a crystal lattice engineering strategy by introducing Gd3+ ions, which have a larger ionic radius, into the Y3+ sites. A series of Y2.95-zGdzMg2AlSi2O12∶5%Ce3+ (z=0-1.2) samples were successfully synthesized. Under 460 nm blue light excitation, this series of phosphors exhibit orange-red emission covering the range of 500 nm to 800 nm. As the Gd3+ doping concentration z increases to 1.2, the main emission peak redshifts from 602 nm to 617 nm, and the corresponding CIE color coordinate x-value shifts from 0.539 7 to 0.562 8.
摘要:This study investigates the regulatory mechanism of Sb3+ co-doping on the luminescent properties of BaSi2O2N2∶0.05Eu2+ phosphors. A series of Ba(Si1-xSbx)2O2N2∶0.05Eu2+ (x=0-0.10) samples were synthesized via the high-temperature solid-state method. It was found that trace Sb3+ co-doping effectively modulates the local crystal field environment of Eu2+, thereby enhancing its luminescence performance. Combined with post-treatment ball milling to optimize the particle size distribution, the sample with the optimal co-doping level (x=0.03) exhibited significantly improved properties. Its emission intensity increased to three times that of the undoped sample. The emission intensity under 400 nm excitation reached 91% of that under 380 nm excitation. The internal and external quantum efficiencies were enhanced from 20.7% and 18.9% to 47.7% and 43.6%, respectively. The phosphor retained 87.2% of its initial luminescence intensity at 120 ℃. A violet-light-excited sunlight-like white LED device fabricated using the optimized phosphor demonstrated excellent performance under a driving current of 35 mA (0.5 W): a color rendering index (Ra) of 98, a color fidelity (Rf) of 97.25, a color gamut (Rg) of 100.4, and a luminous efficacy (η) of 121.5 lm/W. This study indicates that Sb3+ co-doping is an effective strategy for enhancing the performance of such phosphors, showing promising potential for applications in high-quality sunlight-like lighting.
摘要:High-power semiconductor lasers, as core pumping sources for solid-state and fiber laser systems, are of significant application value in the fields such as industrial processing and national defense. This paper reports on a pump laser developed to meet the requirements of mid-infrared fiber laser systems. As a pump source for fiber lasers, the device must possess high output power and high efficiency. By optimizing quantum well materials, waveguide structures, and doping profiles, a single-emitter laser with a 200 μm stripe width was fabricated, achieving an output power of 16.12 W and a maximum conversion efficiency of 53%. Through beam combining and coupling modules, the laser was coupled into a 105 μm optical fiber with a numerical aperture (NA) of 0.18, delivering a maximum output power of 113 W. Test results indicate that the laser exhibits excellent power and temperature stability, thereby enhancing its reliability.
摘要:This study presents a compact, LED-side-pumped laser based on a hybrid Nd∶YLF/Nd∶YAG gain medium that simultaneously generates output at 1 047, 1 053, 1 064 nm. Notably, this tri-wavelength operation is achieved without any intracavity wavelength-selective elements. In quasi-continuous-wave (QCW) mode at 20 Hz, the laser yielded an average power of 5.7 W. When actively Q-switched at 1 kHz, it produced 192 ns pulses with a peak power of 3.125 kW and a beam quality factor (M²) of 5.3. To our knowledge, this work is the first to utilize an intracavity seeding injection technique to achieve multi-wavelength lasing, establishing a novel strategy for extending LED-pumped solid-state laser emission to adjacent spectral regions.
摘要:Broadband photodetectors are of significant application value in fields such as imaging, communication, and spectral analysis. In this work, high-crystalline-quality micrometer-sized Sb2S3 single crystals were prepared by chemical vapor deposition, exhibiting a low defect density of only 4.8×1010 cm-3. An Sb2S3/GaAs heterojunction model was established using SCAPS-1D software, and simulations indicated that the low defect density in Sb2S3 contributes to enhancing the output current and spectral responsivity of the heterojunction, particularly in the ultraviolet and visible wavelength ranges. Based on this, a self-powered heterojunction photodetector based on Sb2S3 single crystal/n-GaAs was fabricated. The device demonstrates excellent photoelectrical response across a broad spectral range from 300 nm to 1 000 nm. Under an optical power density of 0.4 mW·cm-2, it achieves a peak responsivity of over 200 mA·W-1 at 830 nm, a specific detectivity exceeding 3×1010 Jones, a -3 dB bandwidth higher than 1 kHz, and rise/fall response times of 134 μs and 223 μs, respectively. This study provides a feasible approach for the design and fabrication of high-performance, broadband, low-power photodetectors, showing promising potential for applications in integrated optoelectronics and sensing systems.
关键词:Sb2S3 single crystal;photodetector;SCAPS-1D;broadband
摘要:With the booming global market economy and continuous advancement of science and technology, establishing an efficient anti-counterfeiting technology system to tackle the increasingly rampant counterfeiting and shoddy goods has become a key research focus in materials science and information security. Traditional single-mode optical encryption, which typically produces monochromatic luminescence under a single excitation mode, suffers from limitations such as susceptibility to replication. In contrast, optical information encryption represents a critical technological pathway for achieving advanced anti-counterfeiting capabilities, multi-mode optical encryption, leveraging multi-band light emission characteristics, offers an innovative pathway for anti-counterfeiting applications with high security, concealment, and reliability. In this work, BaSi2O5∶Eu3+, Tb3+ crystals were successfully synthesized via a high-temperature solid-state method. Their optical and structural properties were systematically investigated using characterization techniques such as photoluminescence (PL) spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD analysis confirmed the successful synthesis of the material. Furthermore, the luminescent properties were explored through spectral characterization. Finally, the material was applied in the field of anti-counterfeiting utilizing binary encoding. The results indicate that the designed phosphors exhibit strong orange-yellow and vermilion emission under 377 nm and 395 nm excitation, respectively, meeting the performance requirements for multi-mode optical encryption. Additionally, a novel dual-mode excitation scanning device, employing light-emitting diodes with excitation wavelengths of 377 nm and 395 nm, was designed. This device enables efficient dual-mode optical anti-counterfeiting functionality, providing a new technical solution and theoretical foundation for the advancement of anti-counterfeiting technologies.
摘要:In this study, natural biomass Peristrophe baphica Bremk was used as the carbon source, and biomass-derived carbon dots (HCDs) with dual-emission properties were prepared via pyrolysis. Their fluorescent response performance in wide-range pH detection scenarios was systematically investigated. Under excitation at 440 nm, HCDs exhibit dual emission at 510 nm (green light) and 610 nm (red light). Within the wide range covering the full pH scale of 0-14, the intensity ratio of the dual emission peaks (F610/F510) shows a high linear relationship with pH value in both pH 0-3 and pH 4-14 ranges. The correlation coefficients (R²) are as high as 0.998 9 and 0.992 8, respectively, and the detection limits are as low as 0.08 pH unit and 0.48 pH unit, respectively, demonstrating excellent sensitivity and selectivity. This radiometric probe has excellent self-calibration ability, which can effectively overcome the limitation that traditional single-emission probes are susceptible to environmental interference. With the core advantage of wide-range detection, it has broad application prospects in environmental monitoring, bioimaging and other fields.
摘要:A magnetic-fluorescent nanocomposite (CDs-MNPs) was synthesized via a facile one-pot microwave hydrothermal method using polyethyleneimine (PEI) as a bridging agent. PEI connected magnetic nanoparticles (MNPs) and carbon dots (CDs), forming a fluffy clustered structure with nanoscale gaps, which effectively suppressed aggregation-induced photoluminescence quenching (AIQ). CDs-MNPs exhibited a saturation magnetization of 10.4 emu/g and stable solid-state green fluorescence. Benefiting from integrated magnetism, fluorescence, and strong adsorption to fingerprint residues, it achieved clear latent fingerprint (LFP) visualization on dark substrates.