您当前的位置:
首页 >
文章列表页 >
Performance Optimization of High-power 890 nm Semiconductor Laser Pump Sources
Device Fabrication and Physics | 更新时间:2026-09-11
    • Performance Optimization of High-power 890 nm Semiconductor Laser Pump Sources

      增强出版
    • Chinese Journal of Luminescence   Vol. 47, Issue 4, Pages: 665-671(2026)
    • DOI:10.37188/CJL.20250266    

      CLC: TN248.4
    • CSTR:32170.14.CJL.20250266    
    • Received:03 December 2025

      Revised:2025-12-22

      Published:25 April 2026

    移动端阅览

  • YUAN Gaohui,ZHOU Yinli,ZHANG Jianwei,et al.Performance Optimization of High-power 890 nm Semiconductor Laser Pump Sources[J].Chinese Journal of Luminescence,2026,47(04):665-671. DOI: 10.37188/CJL.20250266. CSTR: 32170.14.CJL.20250266.

  •  
  •  

0

Views

1051

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Thermal Stress Suppression of High-power Semiconductor Laser Bars Based on Ga-diamond Room-temperature Packaging
Large-area High Power 940 nm Photonic Crystal Laser
High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser
High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
Highly Efficient Blue Perovskite Light-emitting Diodes Based on Synergistic Optimization of Defect Passivation and Carrier Transport

Related Author

Zhang Jianwei
Chen Chao
Zhang Zhuo
Liu Tianjiao
Zhang Tianqi
Gao Xiaoyan
Cao Yu
Jiang Yuechen

Related Institution

State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences
College of Electronic Information, Huaiyin Institute of Technology, Huaian
Collegel of Electronic Information, Sichuan University
Frontier Interdisciplinary College, National University of Defense Technology
Suzhou EverBright Photonics Co Ltd
0