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Advances in High-brightness Edge-emitting Semiconductor Lasers and Their Pulsed Driving
Invited Review | 更新时间：2026-09-11

    • Advances in High-brightness Edge-emitting Semiconductor Lasers and Their Pulsed Driving

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    • Chinese Journal of Luminescence   Vol. 47, Issue 4, Pages: 582-601(2026)

    • DOI：10.37188/CJL.20250272    

      CLC： TN248.4
    • CSTR：32170.14.CJL.20250272    

    • Received：07 December 2025，

      Revised：2025-12-21，

      Published：25 April 2026

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  • GAO Xiang,LIU Xiang,XUE Xiaoe,et al.Advances in High-brightness Edge-emitting Semiconductor Lasers and Their Pulsed Driving[J].Chinese Journal of Luminescence,2026,47(04):582-601. DOI： 10.37188/CJL.20250272. CSTR： 32170.14.CJL.20250272.

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