Self-powered Broadband Photodetector Based on Sb2S3 Single Crystal/ n-GaAs Heterojunction
Device Fabrication and Physics|更新时间:2026-09-11
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Self-powered Broadband Photodetector Based on Sb2S3 Single Crystal/ n-GaAs Heterojunction
增强出版
Chinese Journal of LuminescenceVol. 47, Issue 4, Pages: 680-691(2026)
作者机构:
1.安徽财经大学 计算机与信息工程学院, 安徽 蚌埠 233030
2.南京航空航天大学 物理学院, 江苏 南京 211106
作者简介:
基金信息:
National Natural Science Foundation of China(62404101);Key Project of Scientific Research in Natural Sciences for Higher Education Institutions in Anhui Province(2023AH050266);General Research Project of Anhui University of Finance and Economics(ACKYC23056)
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Related Author
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Related Institution
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University
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Inner Mongolia People’s Hospital Inner Mongolia Autonomous Region
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