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FA Doping for Strain Relaxation and Fermi Energy Management in B-site Co-doped MAPbI3 Toward Efficient Transport Layer-free Photodetectors
Rebirth after rejection by SCI journals | 更新时间：2026-06-24

    • FA Doping for Strain Relaxation and Fermi Energy Management in B-site Co-doped MAPbI3 Toward Efficient Transport Layer-free Photodetectors

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    • Chinese Journal of Luminescence   Vol. 47, Issue 6, Pages: 970-982(2026)

    • DOI：10.37188/CJL.20260088    

      CLC： TN36
    • CSTR：32170.14.CJL.20260088    

    • Received：19 March 2026，

      Revised：2026-03-20，

      Published：25 June 2026

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  • CHEN Mingming,LIU Kangyuan,ZHANG Huimin,et al.FA Doping for Strain Relaxation and Fermi Energy Management in B-site Co-doped MAPbI3 Toward Efficient Transport Layer-free Photodetectors[J].Chinese Journal of Luminescence,2026,47(06):970-982. DOI: 10.37188/CJL.20260088. CSTR: 32170.14.CJL.20260088. DOI：

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