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Performance Degradations by Leaking Electrons in Organic Light-emitting Diodes Incorporating A p-doped Hole Transport Layer
Device Fabrication and Physics | 更新时间：2026-09-12

    • Performance Degradations by Leaking Electrons in Organic Light-emitting Diodes Incorporating A p-doped Hole Transport Layer

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    • Chinese Journal of Luminescence   Vol. 46, Issue 12, Pages: 2334-2343(2025)

    • DOI：10.37188/CJL.20250179    

      CLC： TN312.8
    • CSTR：32170.14.CJL.20250179    

    • Received：26 June 2025，

      Revised：2025-07-15，

      Published：25 December 2025

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  • LIU Zichen,QIU Mengyu,QIN Dashan,et al.Performance Degradations by Leaking Electrons in Organic Light-emitting Diodes Incorporating A p-doped Hole Transport Layer[J].Chinese Journal of Luminescence,2025,46(12):2334-2343. DOI： 10.37188/CJL.20250179. CSTR： 32170.14.CJL.20250179.

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Related Author

LIU Zichen
QIU Mengyu
QIN Dashan
ZONG Wei
NIU Quan
HAO Hongmin
LIN Wenxin
HUANG Jiangxia

Related Institution

School of Chemical Engineering， Hebei University of Technology
State Key Laboratory of Luminescent Materials and Devices， South China University of Technology
School of Mechanical and Electrical Engineering，Guangdong University of Science and Technology
State Key Laboratory of Luminescent Materials and Devices，Institute of Polymer Photoelectric Materials and Devices，South China University of Technology
Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials， Taiyuan University of Technology
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