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1 060 nm High-brightness HiBBEE Tapered Semiconductor Laser
Device Fabrication and Physics | 更新时间：2026-09-12

    • 1 060 nm High-brightness HiBBEE Tapered Semiconductor Laser

    • Chinese Journal of Luminescence   Vol. 46, Issue 7, Pages: 1310-1316(2025)

    • DOI：10.37188/CJL.20250056    

      CLC： TN248.4
    • CSTR：32170.14.CJL.20250056    

    • Received：03 March 2025，

      Revised：2025-03-15，

      Published：25 July 2025

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  • LIU Xiang,WU Chengkun,XUE Xiaoe,et al.1 060 nm High-brightness HiBBEE Tapered Semiconductor Laser[J].Chinese Journal of Luminescence,2025,46(07):1310-1316. DOI： 10.37188/CJL.20250056. CSTR： 32170.14.CJL.20250056.

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Related Author

LIU Xiang
WU Chengkun
XUE Xiaoe
Jarez Miah Md.
WANG Lijie
SU Jiaxin
GAO Xiang
Fatima Sana

Related Institution

Center of Nanophotonics， Institute of Solid State Physics， Technische Universität Berlin
Daheng Optoelectronic Technology Strategy Research Center， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
Institute of Information and Communication Technology， Bangladesh University of Engineering and Technology
Bimberg Chinese-German Center for Green Photonics & State Key Laboratory of Luminescence Science and Technology， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
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