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Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates
Synthesis and Properties of Materials | 更新时间：2024-10-31
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    • Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates

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    • “In the field of near-infrared nano-photoelectronic devices, GaAs-based nanomaterials are crucial due to their superior optoelectronic properties. Expert xx established the GaAs/AlGaAs core-shell heterostructure system, which provides solutions to solve the problems of type-Ⅱ quantum well structures and surface defects in GaAs nanowires.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 10, Pages: 1639-1646(2024)

    • DOI：10.37188/CJL.20240199    

      CLC： O482.31

    • Published：26 October 2024，

      Received：27 August 2024，

      Revised：02 September 2024，

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  • ZHANG Zhihong,MENG Bingheng,WANG Shuangpeng,et al.Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates[J].Chinese Journal of Luminescence,2024,45(10):1639-1646. DOI： 10.37188/CJL.20240199.

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ZHANG Zhihong
MENG Bingheng
WANG Shuangpeng
KANG Yubin
WEI Zhipeng

Related Institution

State Key Laboratory of High Power Semiconductor Lasers， Changchun University of Science and Technology
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