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High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser
Device Fabrication and Physics | 更新时间：2024-09-26
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    • High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser

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    • “在激光医疗和食品药品检测领域，研究者提出了一种新型高功率橙黄色激光器，实现了9.38瓦的稳定输出，为相关应用提供了新工具。”
    • Chinese Journal of Luminescence   Vol. 45, Issue 9, Pages: 1531-1538(2024)

    • DOI：10.37188/CJL.20240126    

      CLC： TN248.4

    • Published：25 September 2024，

      Received：08 May 2024，

      Revised：22 May 2024，

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  • ZHANG Zhijun,CHEN He,ZHANG Zhuo,et al.High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser[J].Chinese Journal of Luminescence,2024,45(09):1531-1538. DOI： 10.37188/CJL.20240126.

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Related Author

ZHANG Zhuo
ZHANG Jianwei
DU Ziye
ZHOU Yinli
ZHANG Xing
CHEN Chao
NING Yongqiang
WANG Lijun

Related Institution

ACE Photonics， No. Mingxi Road1759， Beihu Science and Technology Development Zone
Daheng College， University of Chinese Academy of Sciences
Key Laboratory of Luminescence Science and Technology ， Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
Key Laboratory of High Power Semiconductor Lasers， School of Physics， Changchun University of Science and Technology
State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
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