您当前的位置：
首页 >
文章列表页 >
High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser
Device Fabrication and Physics | 更新时间：2026-09-12

    • High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser

      增强出版
    • Chinese Journal of Luminescence   Vol. 45, Issue 9, Pages: 1531-1538(2024)

    • DOI：10.37188/CJL.20240126    

      CLC： TN248.4

    • Received：08 May 2024，

      Revised：2024-05-22，

      Published：25 September 2024

    移动端阅览

  • ZHANG Zhijun,CHEN He,ZHANG Zhuo,et al.High Power 1 150 nm Vertical External-cavity Surface Emitting Semiconductor Laser[J].Chinese Journal of Luminescence,2024,45(09):1531-1538. DOI： 10.37188/CJL.20240126.

  •  
  •  

0

Views

1021

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Thermal Stress Suppression of High-power Semiconductor Laser Bars Based on Ga-diamond Room-temperature Packaging
Performance Optimization of High-power 890 nm Semiconductor Laser Pump Sources
Polarization-dependent Strain Quantum Well Gain Chips
High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
Tunable-color Mechanoluminescent Materials via Tb3+→Sm3+ Energy Transfer for Dynamic Anti-counterfeiting Application

Related Author

ZHANG Zhuo
ZHANG Jianwei
DU Ziye
ZHOU Yinli
ZHANG Xing
CHEN Chao
NING Yongqiang
WANG Lijun

Related Institution

Key Laboratory of Luminescence Science and Technology ， Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
Daheng College， University of Chinese Academy of Sciences
ACE Photonics， No. Mingxi Road1759， Beihu Science and Technology Development Zone
University of Chinese Academy of Sciences
State Key Laboratory of Ultrafast Optical Science and Technology， Xi’an Institute of Optics and Precision Mechanics， Chinese Academy of Sciences
0