Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells

WANG Quhui; WANG Haizhu; WANG Jiao; MA Xiaohui

doi:10.37188/CJL.20220375

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Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells

Synthesis and Properties of Materials | 更新时间：2023-05-10

- Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 4, Pages: 627-633(2023)
- 作者机构：
  
  1.长春理工大学高功率半导体国家重点实验室，吉林长春　130022
  2.长春理工大学重庆研究院，重庆　401135
- 作者简介：
- 基金信息：
  
  Science and Technology Development Plan of Jilin Province(20210201089GX);Natural Science Foundation of Chongqing City(cstc2021jcyj⁃msxmX1060)
- DOI：10.37188/CJL.20220375
  CLC： O482.31
- Published：05 April 2023，
  
  Received：23 October 2022，
  
  Revised：08 November 2022，
- 稿件说明：
移动端阅览
王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题[J].发光学报,2023,44(04):627-633.

WANG Quhui,WANG Haizhu,WANG Jiao,et al.Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2023,44(04):627-633.
王曲惠,王海珠,王骄等.高应变InGaAs/GaAs多量子阱中的局域态问题[J].发光学报,2023,44(04):627-633. DOI： 10.37188/CJL.20220375.

WANG Quhui,WANG Haizhu,WANG Jiao,et al.Localized States of High-strain InGaAs/GaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2023,44(04):627-633. DOI： 10.37188/CJL.20220375.

摘要

针对高应变InGaAs/GaAs多量子阱中存在的局域态问题，利用金属有机化合物气相外延（MOCVD）技术，设计并生长了五周期的In

0.3

0.7

As/GaAs高应变多量子阱材料。通过原子力显微镜（Atomic force microscope，AFM）和变温光致发光（Photoluminescence，PL）测试，发现量子阱内部存在缺陷及组分波动的材料无序性表现，验证了多量子阱内部局域态的存在及起源。同时发现在不同测试位置，局域态在低温下对光谱的影响也不同，分别表现为双峰分布和峰位“S”型变化。这进一步说明材料内部无序化程度不同，导致局域态的深度也不同。依据温度⁃带隙关系的拟合，提出了包含局域态的多量子阱材料的电势分布，并揭示了局域态载流子和自由载流子的复合机制。并且借助变功率PL测试，研究了在不同激发功率密度下不同深度的局域态的发光特性。

Abstract

In order to study the localized states in high-strain InGaAs/GaAs multiple quantum wells （MQWs）， a five-period In

0.3

0.7

As/GaAs MQWs structure was designed and grown by metal-organic chemical vapor deposition （MOCVD） technique in this paper. By means of AFM and temperature-dependent PL， the material disorders in MQWs such as defects and component fluctuation were found， and the existence and origin of localized states in MQWs were verified. The influence of the localized states on the spectra at low temperature was different for different measurement positions， exhibiting a bimodal distribution and an “S”-shaped change in peak position， respectively. This further indicated that different disorder within the material led to different depths of localized states. Based on the fitting of the temperature-bandgap relationship， the potential distribution of the MQWs structure containing localized states was proposed， and the recombination mechanism of the localized state carriers and free carriers was revealed. The optical properties of localized states at different depths under different excitation power densities were studied with the help of excitation power-dependent PL measurement.

关键词

InGaAs/GaAs多量子阱局域态高应变金属有机化合物气相外延（MOCVD）

Keywords

InGaAs/GaAs MQWslocalized stateshigh strainmetal⁃organic chemical vapor deposition（MOCVD）

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