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Performance Degradations by Leaking Electrons in Organic Light-emitting Diodes Incorporating A p-doped Hole Transport Layer
Device Fabrication and Physics | 更新时间：2025-12-25

    • Performance Degradations by Leaking Electrons in Organic Light-emitting Diodes Incorporating A p-doped Hole Transport Layer

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    • “In the field of organic light-emitting diodes, researchers have used p-type doped layer PEDOT: PSS and found that leakage current affects device performance, providing insights for high brightness applications.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 12, Pages: 2334-2343(2025)

    • DOI：10.37188/CJL.20250179    

      CLC： TN312.8
    • CSTR：32170.14.CJL.20250179    

    • Received：26 June 2025，

      Revised：2025-07-15，

      Published：25 December 2025

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  • LIU Zichen,QIU Mengyu,QIN Dashan,et al.Performance Degradations by Leaking Electrons in Organic Light-emitting Diodes Incorporating A p-doped Hole Transport Layer[J].Chinese Journal of Luminescence,2025,46(12):2334-2343. DOI： 10.37188/CJL.20250179. CSTR： 32170.14.CJL.20250179.

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LIU Zichen
QIU Mengyu
QIN Dashan
ZONG Wei
NIU Quan
HAO Hongmin
LIN Wenxin
HUANG Jiangxia

Related Institution

School of Chemical Engineering， Hebei University of Technology
State Key Laboratory of Luminescent Materials and Devices， South China University of Technology
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National and Local United Engineering Laboratory of Flat Panel Display Technology， College of Physics and Information Engineering， Fuzhou University
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