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Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures
Device Fabrication and Physics | 更新时间：2026-04-17

    • Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures

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    • Chinese Journal of Luminescence   Vol. 45, Issue 10, Pages: 1699-1706(2024)

    • DOI：10.37188/CJL.20240162    

      CLC： TN304

    • Received：29 June 2024，

      Revised：2024-07-15，

      Published：26 October 2024

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  • LI Xianshuai,LIN Fengyuan,HOU Xiaobing,et al.Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures[J].Chinese Journal of Luminescence,2024,45(10):1699-1706. DOI： 10.37188/CJL.20240162.

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LI Xianshuai
LIN Fengyuan
HOU Xiaobing
LI Kexue
LIAO Lei
HAO Qun
WEI Zhipeng

Related Institution

State Key Laboratory of High Power Semiconductor Lasers， College of Physics， Changchun；University of Science and Technology
State Key Laboratory for Chemo/Biosensing and Chemometrics， School of Physics and Electronics，Hunan University
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