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Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures
Device Fabrication and Physics | 更新时间：2024-10-31
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    • Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures

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    • “In the field of photodetectors, researchers have made significant progress. They combined 3D GaAs nanowires with 0D WS2 quantum dots to form a heterogeneous structure, which provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs nanowires.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 10, Pages: 1699-1706(2024)

    • DOI：10.37188/CJL.20240162    

      CLC： TN304

    • Published：26 October 2024，

      Received：29 June 2024，

      Revised：15 July 2024，

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  • LI XIANSHUAI, LIN FENGYUAN, HOU XIAOBING, et al. Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures. [J]. Chinese journal of luminescence, 2024, 45(10): 1699-1706. DOI： 10.37188/CJL.20240162.

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LI Xianshuai
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