镓基氧化物薄膜日盲紫外探测器研究进展

陈星; 程祯; 刘可为; 申德振

doi:10.37188/CJL.20230146

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镓基氧化物薄膜日盲紫外探测器研究进展

特邀报告 | 更新时间：2023-08-02

- 镓基氧化物薄膜日盲紫外探测器研究进展
  增强出版
- Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors
- 发光学报 2023年44卷第7期页码：1167-1185
- 作者机构：
  
  1.中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室，吉林长春　130033
  2.中国科学院大学材料科学与光电工程研究中心，北京 100049
- 作者简介：
  
  [ "陈星（1984-），男，湖北荆门人，博士，研究员，博士生导师，2012 年于中国科学院大连化学物理研究所获得博士学位，主要从事宽禁带半导体光电材料与器件方面的研究。E-mail： chenxing@ciomp.ac.cn" ]
  [ "刘可为（1981-），男，辽宁铁岭人，博士，研究员，博士生导师，2008年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事宽禁带半导体光电材料与器件方面的研究。" ]
  [ "申德振（1959-），男，辽宁铁岭人，博士，研究员，1993年于中国科学院长春物理研究所获得博士学位，主要从事宽禁带Ⅱ-Ⅵ族半导体光电子材料、器件及物理方面的研究。" ]
- 基金信息：
  
  国家自然科学基金(62074148;61875194;11727902);中组部万人计划青年拔尖项目;长春市科技发展计划(21ZY05);中国科学院青年创新促进会(2020225);吉林省自然科学基金(20220101053JC;20210101145JC);吉林省中青年科技创新创业卓越人才（团队）项目(20220508153RC)
- DOI：10.37188/CJL.20230146
  中图分类号：
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陈星, 程祯, 刘可为, 等. 镓基氧化物薄膜日盲紫外探测器研究进展[J]. 发光学报, 2023,44(7):1167-1185.

CHEN Xing, CHENG Zhen, LIU Kewei, et al. Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2023,44(7):1167-1185.
陈星, 程祯, 刘可为, 等. 镓基氧化物薄膜日盲紫外探测器研究进展[J]. 发光学报, 2023,44(7):1167-1185. DOI： 10.37188/CJL.20230146.

CHEN Xing, CHENG Zhen, LIU Kewei, et al. Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors[J]. Chinese Journal of Luminescence, 2023,44(7):1167-1185. DOI： 10.37188/CJL.20230146.

摘要

日盲紫外探测器在国防和民用领域均具有广阔的应用前景。基于宽禁带半导体材料的日盲紫外探测器具有无需昂贵的滤光片、工作电压低、全固态、体积小、重量轻、抗干扰能力强、工作温度范围广等特点，是公认的新一代紫外探测器。在众多的宽禁带半导体材料中，以Ga,2,O,3,作为典型代表的镓基氧化物材料因其优异的电学和光电特性已经成为近年来微电子学和光电子学领域的研究热点，特别是其本征日盲、耐高温、耐高压、化学稳定性好等优异特点使得该类材料在日盲紫外光电探测领域展现出巨大的发展潜力。鉴于此，本文综述了不同晶体结构的Ga,2,O,3,、镓酸盐氧化物、镓锡氧化物、镓铝氧化物等镓基氧化物薄膜及其日盲紫外探测器研究进展。

Abstract

Solar-blind ultraviolet photodetectors have broad application prospects in the fields of national defense and civilian use. The solar-blind ultraviolet photodetectors based on wide bandgap semiconductor materials are recognized as new generation of ultraviolet detector with the characteristics of no expensive filter， low working voltage， all-solid-state， small size， light weight， strong anti-interference ability， and wide operating temperature range. Among these wide bandgap semiconductors， gallium containing oxides with Ga,2,O,3, as a typical representative have become research hotspot in the field of microelectronics and optoelectronics because of their excellent electrical and optoelectronic properties， especially their unique characteristics such as intrinsic solar-blind， high temperature resistance， high pressure resistance and good chemical stability， which makes such materials show great potential in the field of solar-blind ultraviolet photodetectors. In view of this， this article reviews the research progress in the past five years of gallium-based oxide films such as Ga,2,O,3, with different crystal structures， gallate oxide， gallium aluminum （or tin， indium） oxide and their solar blind ultraviolet detectors.

关键词

日盲紫外探测器Ga2O3镓基氧化物镓酸盐氧化物含镓三元合金氧化物

Keywords

solar-blindultraviolet photodetectorsgallium oxidegallium-based oxidegallate oxidegallium containing ternary oxides

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陈星（1984-），男，湖北荆门人，博士，研究员，博士生导师，2012年于中国科学院大连化学物理研究所获得博士学位，主要从事宽禁带半导体光电材料与器件方面的研究。. doi: 10.1007/s40843-021-1698-3http://dx.doi.org/10.1007/s40843-021-1698-3

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