砷化镓热氧化法制备β⁃Ga<sub>2</sub>O<sub>3</sub>体块薄膜

刁肇悌; 陈威; 董鑫; 焦腾; 李政达

doi:10.37188/CJL.20210399

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砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜

材料合成及性能 | 更新时间：2022-08-01

- 砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜
  增强出版
- β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs
- 发光学报 2022年43卷第7期页码：1095-1101
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室，吉林长春　130012
- 作者简介：
  
  [ "刁肇悌（1998-），女，山东菏泽人，硕士研究生，2020年于山东大学获得学士学位，主要从事宽禁带半导体材料的研究。Email： Diaozt20@mails. jlu. edu. cn" ]
  [ "董鑫（1980-），男，吉林桦甸人，博士，教授，2008 年于大连理工大学获得博士学位，主要从事宽禁带半导体材料及器件的研究。Email： dongx@jlu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(61774072)
- DOI：10.37188/CJL.20210399
  中图分类号： O482.31
- 纸质出版日期：2022-07-05，
  
  收稿日期：2021-12-20，
  
  修回日期：2022-01-05，
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刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜[J].发光学报,2022,43(07):1095-1101.

DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101.
刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜[J].发光学报,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.

DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.

摘要

通过对p型砷化镓（p⁃GaAs）单晶衬底高温热氧化方法制备了β⁃Ga

体块薄膜。探讨了高温氧化过程中O

流量对β⁃Ga

体块薄膜形貌的影响。通过对体块薄膜的晶体质量、结构特性、光致发光特性的测试分析，可以发现在高温高氧环境下GaAs转变为β⁃Ga

体块薄膜的过程与Langmuir蒸发相关。当O

流量较低时（0.2 L/min），GaAs衬底处于缺氧状态，所制备样品呈现纳米线状形貌；而当通入O

流量超过0.4 L/min时，GaAs衬底被完全氧化为具有纳米岛状结构的β⁃Ga

体块薄膜，且晶体质量得到显著提高。本文提出的砷化镓单晶热氧化工艺可以高效、低成本地获得较高结晶质量的纳米结构β⁃Ga

体块薄膜，对于β⁃Ga

材料的应用具有极大的丰富作用。

Abstract

In this paper， β-Ga

bulk films were prepared by high-temperature thermal oxidation of p-type gallium arsenide （p-GaAs） single crystal substrate. The effect of O

flow rate on the morphology of β-Ga

bulk films was also discussed. By testing and analysing the crystal quality， structural characteristics and photoluminescence characteristics of the bulk films， we found that the transformation of GaAs into β-Ga

bulk films was related to Langmuir evaporation. When the O

flow rate was low（0.2 L/min）， GaAs substrate was in anoxic state， and the prepared samples showed nanolinear morphology. However， when the flow rate of O

exceeds 0.4 L/min， GaAs substrate is completely oxidized into β-Ga

bulk film with nanometer island structure， and the crystal quality is significantly improved. The thermal oxidation process based on the GaAs single crystal proposed in this article can obtain nano-structured β-Ga

bulk films of high crystal quality with high efficiency and low cost. This process enriches the application of β-Ga

materials greatly.

关键词

热氧化纳米岛状体块薄膜β-Ga2O3氧气流量

Keywords

thermal oxidationnano island bulk filmβ-Ga2O3oxygen flow rate

references

KIM S，ZHANG Y W，YUAN C，et al. Thermal management of β-Ga2O3 current aperture vertical electron transistors ［J］. IEEE Trans.Compon.，Packaging Manuf. Technol.， 2021，11（8）：1171-1176. doi: 10.1109/tcpmt.2021.3089321http://dx.doi.org/10.1109/tcpmt.2021.3089321

JESENOVEC J，WEBER M H，PANSEGRAU C，et al. Gallium vacancy formation in oxygen annealed β-Ga2O3 ［J］. J. Appl. Phys.， 2021，129（24）：245701-1-9. doi: 10.1063/5.0053325http://dx.doi.org/10.1063/5.0053325

COOKE J，SENSALE-RODRIGUEZ B，GHADBEIGI L. Methods for synthesizing β-Ga2O3 thin films beyond epitaxy ［J］. J. Phys. Photonics， 2021，3（3）：032005-1-16. doi: 10.1088/2515-7647/ac0db5http://dx.doi.org/10.1088/2515-7647/ac0db5

WANG Y H，LI H R，CAO J，et al. Ultrahigh gain solar blind avalanche photodetector using an amorphous Ga2O3-based heterojunction ［J］. ACS Nano， 2021，15（10）：16654-16663. doi: 10.1021/acsnano.1c06567http://dx.doi.org/10.1021/acsnano.1c06567

郭道友，李培刚，陈政委，等. 超宽禁带半导体β-Ga2O3及深紫外透明电极、日盲探测器的研究进展［J］. 物理学报， 2019，68（7）：078501-1-36. doi: 10.7498/aps.68.20181845http://dx.doi.org/10.7498/aps.68.20181845

GUO D Y，LI P G，CHEN Z W，et al. Ultra-wide bandgap semiconductor of β-Ga2O3 and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector ［J］. Acta Phys. Sinica， 2019，68（7）：078501-1-36. （in Chinese）. doi: 10.7498/aps.68.20181845http://dx.doi.org/10.7498/aps.68.20181845

XING Y H，ZHANG Y，HAN J，et al. Research of nanopore structure of Ga2O3 film in MOCVD for improving the performance of UV photoresponse ［J］. Nanotechnology， 2021，32（9）：095301-1-8. doi: 10.1088/1361-6528/abc4a2http://dx.doi.org/10.1088/1361-6528/abc4a2

ZHANG J H，JIAO S J，WANG D B，et al. Nano tree-like branched structure with α-Ga2O3 covered by γ-Al2O3 for highly efficient detection of solar-blind ultraviolet light using self-powered photoelectrochemical method ［J］. Appl. Surf. Sci.， 2021，541：148380-1-8. doi: 10.1016/j.apsusc.2020.148380http://dx.doi.org/10.1016/j.apsusc.2020.148380

DE MELO R P JR，OLIVEIRA N T C，DOMINGUEZ C T，et al. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application ［J］. J. Appl. Phys.， 2016，119（16）：163107-1-9. doi: 10.1063/1.4947290http://dx.doi.org/10.1063/1.4947290

LI J S，ZHANG X D，CAO X，et al. Self-catalyzed metal organic chemical vapor deposition growth of vertical β-Ga2O3 nanowire arrays ［J］. Nanotechnology， 2020，31（2）：02LT01-1-6. doi: 10.1088/1361-6528/ab4774http://dx.doi.org/10.1088/1361-6528/ab4774

ALHALAILI B，VIDU R，MAO H，et al. Comparative study of growth morphologies of Ga2O3 nanowires on different substrates ［J］. Nanomaterials， 2020，10（10）：1920-1-11. doi: 10.3390/nano10101920http://dx.doi.org/10.3390/nano10101920

LEONTIE L，SPRINCEAN V，UNTILA D，et al. Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate ［J］. Thin Solid Films， 2019，689：137502-1-6. doi: 10.1016/j.tsf.2019.137502http://dx.doi.org/10.1016/j.tsf.2019.137502

PATIL-CHAUDHARI D，OMBABA M，OH J Y，et al. Solar blind photodetectors enabled by nanotextured β-Ga2O3 films grown via oxidation of GaAs substrates ［J］. IEEE Photonics J.， 2017，9（2）：2300207-1-10. doi: 10.1109/jphot.2017.2688463http://dx.doi.org/10.1109/jphot.2017.2688463

HE T，ZHAO Y K，ZHANG X D，et al. Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction ［J］. Nanophotonics， 2018，7（9）：1557-1562. doi: 10.1515/nanoph-2018-0061http://dx.doi.org/10.1515/nanoph-2018-0061

LI Y B，TOKIZONO T，LIAO M Y，et al. Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection ［J］. Adv. Funct. Mater.， 2010， 20（22）：3972-3978. doi: 10.1002/adfm.201001140http://dx.doi.org/10.1002/adfm.201001140

FILIPPO E，SICILIANO M，GENGA A，et al. Single crystalline β-Ga2O3 nanowires synthesized by thermal oxidation of GaSe layer ［J］. Mater. Res. Bull.， 2013，48（5）：1741-1744. doi: 10.1016/j.materresbull.2012.08.083http://dx.doi.org/10.1016/j.materresbull.2012.08.083

ALHALAILI B，MAO H，DRYDEN D M，et al. Influence of silver as a catalyst on the growth of β-Ga2O3 nanowires on GaAs ［J］. Materials， 2020，13（23）：5377-1-14. doi: 10.3390/ma13235377http://dx.doi.org/10.3390/ma13235377

KORBUTOWICZ R，STAFINIAK A，SERAFIŃCZUK J. Ga2O3 nanowires preparation at atmospheric pressure ［J］. Mater. Sci.-Pol.， 2017，35（2）：412-420. doi: 10.1515/msp-2017-0026http://dx.doi.org/10.1515/msp-2017-0026

ZHOU Z Y，ZHENG C X，TANG W X，et al. Congruent evaporation temperature of GaAs（001） controlled by As flux ［J］. Appl. Phys. Lett.， 2010，97（12）：121912-1-3. doi: 10.1063/1.3491552http://dx.doi.org/10.1063/1.3491552

DING Y，GAO P X，WANG Z L. Catalyst-nanostructure interfacial lattice mismatch in determining the shape of VLS grown nanowires and nanobelts：acase of Sn/ZnO ［J］. J. Am. Chem. Soc.， 2004，126（7）：2066-2072. doi: 10.1021/ja039354rhttp://dx.doi.org/10.1021/ja039354r

CHEN W，JIAO T，LI Z M，et al. Preparation of β-Ga2O3 nanostructured films by thermal oxidation of GaAs substrate ［J］. Ceram. Int.， 2022，48（4）：5698-5703. doi: 10.1016/j.ceramint.2021.11.115http://dx.doi.org/10.1016/j.ceramint.2021.11.115

KRANERT C，STURM C，SCHMIDT-GRUND R，et al. Raman tensor elements of β-Ga2O3 ［J］. Sci. Rep.， 2016，6（1）：35964-1-9. doi: 10.1038/srep35964http://dx.doi.org/10.1038/srep35964

MACHON D，MCMILLAN P F，XU B，et al. High-pressure study of the β-to-α transition in Ga2O3 ［J］.Phys. Rev. B， 2006，73（9）：094125-1-9. doi: 10.1103/physrevb.73.094125http://dx.doi.org/10.1103/physrevb.73.094125

WAN K，YOUNG J F. Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs ［J］. Phys. Rev. B， 1990，41（15）：10772-10779. doi: 10.1103/physrevb.41.10772http://dx.doi.org/10.1103/physrevb.41.10772

伍林，欧阳兆辉，曹淑超，等. 拉曼光谱技术的应用及研究进展［J］. 光散射学报， 2005，17（2）：180-186. doi: 10.3969/j.issn.1004-5929.2005.02.013http://dx.doi.org/10.3969/j.issn.1004-5929.2005.02.013

WU L，OUYANG Z H，CAO S C，et al. Research development and application of Raman scattering technology ［J］. Chin. J. Light Scattering， 2005，17（2）：180-186. （in Chinese）. doi: 10.3969/j.issn.1004-5929.2005.02.013http://dx.doi.org/10.3969/j.issn.1004-5929.2005.02.013

马腾宇，李万俊，何先旺，等. β-Ga2O3纳米材料的尺寸调控与光致发光特性［J］. 物理学报， 2020，69（10）：108102-1-11. doi: 10.7498/aps.69.20200158http://dx.doi.org/10.7498/aps.69.20200158

MA T Y，LI W J，HE X W，et al. Size regulation and photoluminescence propertiesof β-Ga2O3 nanomaterials ［J］. Acta Phys. Sinica， 2020，69（10）：108102-1-11. （in Chinese）. doi: 10.7498/aps.69.20200158http://dx.doi.org/10.7498/aps.69.20200158

HU D Q，ZHUANG S W，DONG X，et al. Growth and properties of one-dimensional β-Ga2O3 nanostructures on c-plane sapphire substrates ［J］. Mater. Sci. Semicond. Process.， 2018，75：31-35. doi: 10.1016/j.mssp.2017.11.018http://dx.doi.org/10.1016/j.mssp.2017.11.018

FRODASON Y K，JOHANSEN K M，VINES L，et al. Self-trapped hole and impurity-related broad luminescence in β-Ga2O3 ［J］. J. Appl. Phys.， 2020，127（7）：075701-1-9. doi: 10.1063/1.5140742http://dx.doi.org/10.1063/1.5140742

HO Q D，FRAUENHEIM T，DEÁK P. Origin of photoluminescence in β-Ga2O3 ［J］. Phys. Rev. B， 2018，97（11）：115163-1-4. doi: 10.1103/physrevb.97.115163http://dx.doi.org/10.1103/physrevb.97.115163

冯艳彬. 蓝宝石衬底上氧化镓薄膜的生长与退火研究［D］. 大连：大连理工大学， 2014.

FENG Y B. Growth and Annealing Study of Gallium Oxide Films on Sapphire Substrates ［D］. Dalian：Dalian University of Technology， 2014. （in Chinese）

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砷化镓热氧化法制备β⁃Ga2O3体块薄膜

β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs

DOI：10.37188/CJL.20210399

摘要

Abstract

关键词

Keywords

references

砷化镓热氧化法制备β⁃Ga₂O₃体块薄膜

β-Ga₂O₃ Bulk Films Prepared by Thermal Oxidation of GaAs