GaN基白光二极管漏电失效分析

左文财; 文尚胜; 周悦; 王翌鑫; 于婧雅; 方方

doi:10.37188/CJL.20200211

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GaN基白光二极管漏电失效分析

发光产业及技术前沿 | 更新时间：2020-11-10

- GaN基白光二极管漏电失效分析
- Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED
- 发光学报 2020年41卷第11期页码：1431-1437
- 作者机构：
  
  1.华南理工大学材料科学与工程学院, 广东广州 510640
  2.广东金鉴检测科技有限公司, 广东广州 511300
- 作者简介：
  
  [ "左文财(1999-), 男, 江西南昌人, 在读本科生, 主要从事LED相关的研究。E-mail:mswencai@mail.scut.edu.cn" ]
  [ "文尚胜(1964-), 男, 湖北黄冈人, 博士, 教授, 2001年于华南师范大学获得博士学位, 主要从事植物照明技术、可见光通信技术的研究。E-mail:shshwen@scut.edu.cn" ]
- 基金信息：
  
  广东省扬帆计划(2015YT02C093);Huizhou Science and Technology Planning Project(2019SX0111011);广东省科技计划(2017B010114001);中山市科技计划(2017C1011);中山市科技计划(2018A10013)
- DOI：10.37188/CJL.20200211
  中图分类号： TN383.1
- 纸质出版日期：2020-11，
  
  收稿日期：2020-7-17，
  
  录用日期：2020-8-20
扫描看全文
左文财, 文尚胜, 周悦, 等. GaN基白光二极管漏电失效分析[J]. 发光学报, 2020,41(11):1431-1437.

Weng-cai ZUO, Shang-sheng WEN, Yue ZHOU, et al. Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED[J]. Chinese Journal of Luminescence, 2020,41(11):1431-1437.
左文财, 文尚胜, 周悦, 等. GaN基白光二极管漏电失效分析[J]. 发光学报, 2020,41(11):1431-1437. DOI： 10.37188/CJL.20200211.

Weng-cai ZUO, Shang-sheng WEN, Yue ZHOU, et al. Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED[J]. Chinese Journal of Luminescence, 2020,41(11):1431-1437. DOI： 10.37188/CJL.20200211.

摘要

芯片漏电会对LED灯珠稳定性和寿命造成很大影响，为此本文对LED样品的漏电失效机理进行了研究。在微光显微镜观测下，样品的芯片正电极位置存在漏电异常。利用氩离子精密刻蚀系统对样品进行截面制样，并采用扫描电镜进行观察，分析可能导致漏电的原因。SEM下观测到漏电样品芯片正极出现空洞，且空洞对应的外延层出现较明显的裂缝。分析认为，在焊接时电极产生空洞，在后续高温回流焊、封装和使用过程中压力和应力集中在裂缝处，使GaN外延层受损导致漏电。研究结果为LED芯片漏电检测手段、机理分析提供了良好的参考方案，并为解决芯片裂缝和空洞问题提供了理论参考方向。

Abstract

The failure mechanism of leakage in LED samples was studied. Since leakage has a negative impact on LED quality

it is necessary to analyze how the process works on the leakage. Two groups of failure samples were selected for study. Through testing

there are abnormal leakage at the positive electrodes under the emission microscope. The section of the sample was prepared by fully automated argon ion polishing system and observed by scanning electron microscope. SEM observation showed that in the chips there were holes in electrodes and obvious cracks in the epitaxial layer corresponding to the holes. According to the analysis

electrode cavity is generated during welding. In the subsequent high-temperature reflow welding

packaging also using process

pressure and stress are concentrated at the crack

which causes damage of GaN epitaxial layer and leads to electric leakage. It provides a good reference scheme for LED chip leakage detection means and mechanism analysis. What's more

it provides a theoretical reference direction for reducing chip cracks and holes.

关键词

发光二极管失效分析漏电静电

Keywords

light emitting diodefailure analysisleakagestatic

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