Si掺杂AlN的电子结构和光吸收

程 伟; 侯芹英; 苏希玉; 支晓芬; 司盼盼

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Si掺杂AlN的电子结构和光吸收

论文 | 更新时间：2020-08-12

- Si掺杂AlN的电子结构和光吸收
- Electronic Structure and Optical Absorption of Si-doped AlN System
- 发光学报 2009年30卷第6期页码：802-806
- 作者机构：
  
  曲阜师范大学物理工程学院, 山东曲阜 273165
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.2;O481.1
- 收稿：2009-01-19，
  
  修回：1900-1-2，
  
  网络首发：2009-12-30，
  
  纸质出版：2009-12-30
- 稿件说明：
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程伟, 侯芹英, 苏希玉, 等. Si掺杂AlN的电子结构和光吸收[J]. 发光学报, 2009,30(6):802-806.

CHENG Wei, HOU Qin-ying, SU Xi-yu, et al. Electronic Structure and Optical Absorption of Si-doped AlN System[J]. Chinese Journal of Luminescence, 2009, 30(6): 802-806.
程伟, 侯芹英, 苏希玉, 等. Si掺杂AlN的电子结构和光吸收[J]. 发光学报, 2009,30(6):802-806. DOI：

CHENG Wei, HOU Qin-ying, SU Xi-yu, et al. Electronic Structure and Optical Absorption of Si-doped AlN System[J]. Chinese Journal of Luminescence, 2009, 30(6): 802-806. DOI：

摘要

基于密度泛函理论第一性原理的平面波超软赝势法

研究了Si掺杂纤锌矿AlN的电子结构和光吸收性质。结果表明:杂质能级位于导带底附近

与Al 3p能级复合形成导带底

使系统发生Mott相变;Si掺杂后在2.02 eV附近出现新的吸收峰

从而改善系统在可见光区的吸收特性。

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