SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善

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SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善

论文 | 更新时间：2020-08-12

- SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善
- Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)
- 发光学报 2009年30卷第6期页码：807-811
- 作者机构：
  
  1. 中国科学技术大学物理系
  2. 中国科学技术大学国家同步辐射实验室
  3. 中国科学院合肥智能机械研究所, 安徽合肥 230031
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472;O482.31
- 收稿：2009-03-31，
  
  修回：1900-1-2，
  
  网络首发：2009-12-30，
  
  纸质出版：2009-12-30
- 稿件说明：
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康朝阳, 赵朝阳, 刘峥嵘, 等. SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善[J]. 发光学报, 2009,30(6):807-811.

KANG Chao-yang, ZHAO Chao-yang, LIU Zheng-rong, et al. Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2009, 30(6): 807-811.
康朝阳, 赵朝阳, 刘峥嵘, 等. SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善[J]. 发光学报, 2009,30(6):807-811. DOI：

KANG Chao-yang, ZHAO Chao-yang, LIU Zheng-rong, et al. Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2009, 30(6): 807-811. DOI：

摘要

用脉冲激光沉积(PLD)技术制备了ZnO/SiC/Si和 ZnO/Si薄膜并制成了紫外探测器。利用X射线衍射(XRD)

光致发光(PL)谱

I-V

曲线和光电响应谱对薄膜的结构和光电性能进行了研究。实验结果表明:SiC缓冲层改善了ZnO薄膜的结晶质量和光电性能

其原因可能是SiC作为柔性衬底能够减少ZnO与Si 之间大的晶格失配和热失配导致的界面缺陷和界面态。

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references

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