Chen Weide, Ma Zhixun, Xu Zhenjia, He Jie, Gu Quan, Liang Jianjun. STRONG ROOM-TEMPERATURE LUMINESCENCE AT 1.54μm FROM Er-IMPLANTED SiO<sub>x</sub>[J]. Chinese Journal of Luminescence, 1999,20(1): 55-59
Chen Weide, Ma Zhixun, Xu Zhenjia, He Jie, Gu Quan, Liang Jianjun. STRONG ROOM-TEMPERATURE LUMINESCENCE AT 1.54μm FROM Er-IMPLANTED SiO<sub>x</sub>[J]. Chinese Journal of Luminescence, 1999,20(1): 55-59DOI:
films with oxygen concentrations in the range 13~46% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using pure SiH
4
and N
2
O mixture. Erbium was then implanted at an energy of 500keV with dose of 2×10
15
ions/cm
2
. After annealing at temperature in the range 300~950℃
the samples show intense room-temperature luminescence peaked at around 1.54μm. The luminescence intensity increases with increasing oxygen concentration in the film. The Er luminescence depends strongly on the SiO
x
microstructure. The related mechanism for optical activation and emission was discussed.