Yang Xizhen. TEMPERATURE DEPENDENCE OF OPTICAL QUENCHING CROSS SECTION SPECTRA OF GaAs<sub>1-x</sub>P<sub>x</sub>:EL2(x=0~0.08) CENTER[J]. Chinese Journal of Luminescence, 1999,20(1): 11-13
Yang Xizhen. TEMPERATURE DEPENDENCE OF OPTICAL QUENCHING CROSS SECTION SPECTRA OF GaAs<sub>1-x</sub>P<sub>x</sub>:EL2(x=0~0.08) CENTER[J]. Chinese Journal of Luminescence, 1999,20(1): 11-13DOI:
The temperature dependence of optical quenching cross section spectra of GaAs
1-x
P
x
:EL2 center (x=0~0.08) was studied experimentally. For all samples studied
the peak energy has a red shift as temperature goes up from~40K to ~100K. At the same time
the peak height increases
the larger
x
is. The spectra can by fitted to a sum of two Gaussian components. The results support that EL2 center has two excited states (e1
e2). It also shows that the extrapolated values at 0K are e1(0)=1.016eV and e2(0)=1.046eV
independing from
x
. The temperature and composition dependences of the fitting parameters support the assignment that both e1 and e2 are effective mass states related with