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1. 华南理工大学 电子与信息学院,广东 广州,510640
2. 华南理工大学 国家移动超声探测工程技术研究中心,广东 广州,510640
3. 工业和信息化部电子第五研究所 电子元器件可靠性物理及其应用技术国家重点实验室,广东 广州,510610
纸质出版日期:2015-2-3,
收稿日期:2014-11-21,
修回日期:2014-12-15,
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莫淑芬, 刘玉荣, 刘远. 双有源层结构掺硅氧化锌薄膜晶体管的电特性[J]. 发光学报, 2015,36(2): 213-218
MO Shu-fen, LIU Yu-rong, LIU Yuan. Electrical Properties of Si-doped ZnO-based Thin-film Transistor with Dual-active-layer Structure[J]. Chinese Journal of Luminescence, 2015,36(2): 213-218
莫淑芬, 刘玉荣, 刘远. 双有源层结构掺硅氧化锌薄膜晶体管的电特性[J]. 发光学报, 2015,36(2): 213-218 DOI: 10.3788/fgxb20153602.0213.
MO Shu-fen, LIU Yu-rong, LIU Yuan. Electrical Properties of Si-doped ZnO-based Thin-film Transistor with Dual-active-layer Structure[J]. Chinese Journal of Luminescence, 2015,36(2): 213-218 DOI: 10.3788/fgxb20153602.0213.
为降低氧化锌薄膜晶体管(ZnO-TFT)的关态电流(I
off
)
提高开关电流比(I
on
/I
off
)
采用磁控溅射法制备掺硅氧化锌薄膜晶体管(SZO-TFT)和SZO/ZnO双层有源层结构的TFT器件
研究了Si含量对SZO薄膜透光性和SZO-TFT电性能的影响
比较了单层与双层有源层结构TFT器件的电特性.与ZnO-TFT相比
SZO-TFT的I
off
低2个数量级
最低达1.510
-12
A;I
on
/I
off
高两个数量级
最高达7.9710
6
.而SZO/ZnO双有源层结构的TFT器件可在不降低载流子迁移率的情况下
I
on
/I
off
比ZnO-TFT提高近两个数量级
有效改善了器件的整体性能.
In order to reduce the off-state leakage current and increase the on/off current ratio in ZnO thin-film transistor (ZnO-TFT)
Si-doped ZnO thin-film transistors (SZO-TFTs) and TFT with SZO/ZnO acted as dual-active-layer were fabricated by magnetron sputtering method. Effects of silicon concentration on optical transmittance of Si-doped ZnO thin film and electrical properties of SZO-TFT were investigated. Moreover
the electrical characteristics of the TFT with SZO/ZnO acted as dual-active-layer were compared with those of the TFTs with ZnO and Si-doped ZnO acted as single-active-layer. The experimental results indicated that
compared with undoped ZnO-TFT
the off-state leakage current of SZO-TFT reduces by more than two orders of magnitude
down to 1.510
-12
A
and the on/off current ratio increases by more than two orders of magnitude with a maximum value up to 7.9710
6
; The SZO/ZnO dual-active-layer architecture used in the ZnO-based TFT could increase the on/off current ratio by about two orders of magnitude with no reduction in carrier mobility
and thus optimize the performance of the ZnO-based TFT.
薄膜晶体管氧化锌硅掺杂双层有源层
thin film transistorzinc oxidesilicon dopingdual-active layer
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Rim Y S, Kim D L, Jeong W H, et al. Improved bais stabality of solution-processed InZnO thin-film transistors by Zr addition [J]. Electrochem. Solid-state Lett., 2012, 15(2):H37-H40.
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