双有源层结构掺硅氧化锌薄膜晶体管的电特性

莫淑芬; 刘玉荣; 刘远

doi:10.3788/fgxb20153602.0213

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双有源层结构掺硅氧化锌薄膜晶体管的电特性

器件制备及器件物理 | 更新时间：2020-08-12

- 双有源层结构掺硅氧化锌薄膜晶体管的电特性
- Electrical Properties of Si-doped ZnO-based Thin-film Transistor with Dual-active-layer Structure
- 发光学报 2015年36卷第2期页码：213-218
- 作者机构：
  
  1. 华南理工大学电子与信息学院,广东广州,510640
  2. 华南理工大学国家移动超声探测工程技术研究中心,广东广州,510640
  3. 工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国家重点实验室,广东广州,510610
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61076113)资助项目()
- DOI：10.3788/fgxb20153602.0213
  中图分类号： O472+.4;TN321+.5
- 纸质出版日期：2015-2-3，
  
  收稿日期：2014-11-21，
  
  修回日期：2014-12-15，
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莫淑芬, 刘玉荣, 刘远. 双有源层结构掺硅氧化锌薄膜晶体管的电特性[J]. 发光学报, 2015,36(2): 213-218

MO Shu-fen, LIU Yu-rong, LIU Yuan. Electrical Properties of Si-doped ZnO-based Thin-film Transistor with Dual-active-layer Structure[J]. Chinese Journal of Luminescence, 2015,36(2): 213-218
莫淑芬, 刘玉荣, 刘远. 双有源层结构掺硅氧化锌薄膜晶体管的电特性[J]. 发光学报, 2015,36(2): 213-218 DOI： 10.3788/fgxb20153602.0213.

MO Shu-fen, LIU Yu-rong, LIU Yuan. Electrical Properties of Si-doped ZnO-based Thin-film Transistor with Dual-active-layer Structure[J]. Chinese Journal of Luminescence, 2015,36(2): 213-218 DOI： 10.3788/fgxb20153602.0213.

摘要

为降低氧化锌薄膜晶体管(ZnO-TFT)的关态电流(I

off

)

提高开关电流比(I

off

)

采用磁控溅射法制备掺硅氧化锌薄膜晶体管(SZO-TFT)和SZO/ZnO双层有源层结构的TFT器件

研究了Si含量对SZO薄膜透光性和SZO-TFT电性能的影响

比较了单层与双层有源层结构TFT器件的电特性.与ZnO-TFT相比

SZO-TFT的I

off

低2个数量级

最低达1.510

-12

A;I

off

高两个数量级

最高达7.9710

.而SZO/ZnO双有源层结构的TFT器件可在不降低载流子迁移率的情况下

off

比ZnO-TFT提高近两个数量级

有效改善了器件的整体性能.

Abstract

In order to reduce the off-state leakage current and increase the on/off current ratio in ZnO thin-film transistor (ZnO-TFT)

Si-doped ZnO thin-film transistors (SZO-TFTs) and TFT with SZO/ZnO acted as dual-active-layer were fabricated by magnetron sputtering method. Effects of silicon concentration on optical transmittance of Si-doped ZnO thin film and electrical properties of SZO-TFT were investigated. Moreover

the electrical characteristics of the TFT with SZO/ZnO acted as dual-active-layer were compared with those of the TFTs with ZnO and Si-doped ZnO acted as single-active-layer. The experimental results indicated that

compared with undoped ZnO-TFT

the off-state leakage current of SZO-TFT reduces by more than two orders of magnitude

down to 1.510

-12

and the on/off current ratio increases by more than two orders of magnitude with a maximum value up to 7.9710

; The SZO/ZnO dual-active-layer architecture used in the ZnO-based TFT could increase the on/off current ratio by about two orders of magnitude with no reduction in carrier mobility

and thus optimize the performance of the ZnO-based TFT.

关键词

薄膜晶体管氧化锌硅掺杂双层有源层

Keywords

thin film transistorzinc oxidesilicon dopingdual-active layer

references

Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: A review of recent advances [J]. Adv. Mater., 2012, 24(22):2945-2986.

Nomura K, Ohta H, Ueda K, et al. Thin-flm transistor fabricated in single-crystalline transparent oxide semiconductor [J]. Science, 2003, 300(5623):1269-1272.

Lin C Y, Chien C W, Wu C H, et al. Top-gate staggered a-IGZO TFTs adopting the bilayer gate insulator for driving AMOLED [J]. IEEE Trans. Electron. Dev., 2012, 59(6):1701-1708.

Zhou F, Zhang L, Li J, et al. Effect of Ta2O5 thickness on the performances of ZnO-based thin film transistors [J]. Chin. J. Lumin.(发光学报), 2011, 32(2):188-193 (in Chinese).

Cross R B M, De Souza M M. The effect of gate-bias stress and temperature on the performance of ZnO thin-film transistors [J]. IEEE Trans. Dev. Mater. Riliab., 2008, 8(2):277-282.

Lan L F, Peng J B. High-performance indium-gallium-zinc oxide thin-film transistors based on anodic aluminum oxide [J]. IEEE Trans. Electron. Dev., 2011, 58(5):1452-1455.

Yang B S, Huh M S, Oh S, et al. Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors [J]. Appl. Phys. Lett., 2011, 98(12):122110-1-3.

Cho D H, Park S H K, Yang S, et al. Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED [J]. IEICE Trans. Electron., 2009, E92-C(11):1340-1346.

Wu H J, Li X F, Lu J G, et al. Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors [J]. Appl. Phys. Lett., 2013, 103(8):082109-1-3.

Remashan K, Choi Y S, Park S J, et al. High performance MOCVD-grown ZnO thin-film transistor with a thin MgZnO layer at channel/gate insulator interface [J]. J. Electrochem. Soc., 2010, 157(12):121-126.

Park J C, Kim S, Kim S, et al. Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers [J]. Adv. Mater., 2010, 22(48):5512-5516.

Kim C H, Rim Y S, Kim H J, et al. Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process [J]. ACS Appl. Mater. Interf., 2013, 5(13):6108-6112.

Jeong W H, Kim K M, Kim D L, et al. The effects of dual-active-layer modulation on a low-temperature solution-proceeded oxide thin-film transistor [J]. IEEE Trans. Electron. Dev., 2012, 59(8):2149-2152.

Rim Y S, Kim D L, Jeong W H, et al. Improved bais stabality of solution-processed InZnO thin-film transistors by Zr addition [J]. Electrochem. Solid-state Lett., 2012, 15(2):H37-H40.

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