射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜

林 兰; 叶志镇; 龚 丽; 别 勋; 吕建国; 赵炳辉

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射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜

论文 | 更新时间：2020-08-12

- 射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜
- Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing
- 发光学报 2010年31卷第2期页码：199-203
- 作者机构：
  
  浙江大学硅材料国家重点实验室,浙江杭州,310027
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.4;O484.1
- 纸质出版日期：2010-4-30，
  
  网络出版日期：2010-4-30，
  
  收稿日期：2009-11-25，
  
  修回日期：1900-1-2，
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林兰, 叶志镇, 龚丽, 等. 射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜[J]. 发光学报, 2010,31(2):199-203.

LIN Lan, YE Zhi-zhen, GONG Li, et al. Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing[J]. Chinese Journal of Luminescence, 2010,31(2):199-203.
林兰, 叶志镇, 龚丽, 等. 射频反应磁控溅射法退火生长Na-N共掺杂p-ZnO薄膜[J]. 发光学报, 2010,31(2):199-203. DOI：

LIN Lan, YE Zhi-zhen, GONG Li, et al. Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing[J]. Chinese Journal of Luminescence, 2010,31(2):199-203. DOI：

摘要

采用射频反应磁控溅射法退火生长得到了Na-N共掺杂p-ZnO薄膜。XRD测试结果表明

退火前后均得到

轴择优取向的ZnO薄膜。Hall测试结果表明:退火后薄膜的电学性能明显改善

得到了p-ZnO薄膜

退火温度为450 ℃时取得最佳电学性能:室温电阻率为139.2 Ω·cm

迁移率为0.2 cm

·V

-1

·s

-1

空穴浓度为2.5×10

-3

。XPS分析表明:Na掺入ZnO中作为受主Na

而存在

N主要以N—H键的形式存在

其受主N

的作用不明显

但是否存在Na

-N

受主复合体

还需进一步的研究。

Abstract

Na-N co-doped p-type ZnO ∶ (Na

N)] thin films were prepared on glass substrates by RF reactive magnetron sputtering and post-annealing techniques in the N

O ambient. X-ray diffraction (XRD) measurements showed that all films possessed a good crystallinity with

-axis preferential orientation. After annealing

the intensity of the (002) diffraction peak and the value of 2

increase and the FWHM decreases. Hall measurements showed that the electrical properties of ZnO ∶ (Na

N) films were improved after annealing and the p-type behavior was realized. The film annealed at 450 ℃ showed the lowest resistivity of 139.2 Ω·cm with a Hall mobility of 0.2 cm

·V

-1

·s

-1

and a carrier concentration of 2.5×10

-3

. XPS measurements showed that Na

acceptor in ZnO ∶ (Na

N) is responsible for the p-type conductivity of the ZnO ∶ (Na

N). In addition

Na-N complex may exist in the films

which acts as acceptor. Detailed investigation is now in progress.

关键词

射频反应磁控溅射Na-N共掺p型ZnO薄膜退火

Keywords

RF reactive magnetron sputteringNa-N co-dopingp-type ZnO filmspost-annealing

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