SUN Yiqun, ZHANG Liangliang, PAN Guohui, WU Hao, WU Huajun, ZHANG Jiahua
DOI:10.37188/CJL.20250016
摘要:Organic-inorganic hybrid manganese halides are ideal narrow-band green light materials, but their encapsulated LED devices rapidly degrade after being lit, making them unsuitable for applications. This paper reports on an organic-inorganic hybrid manganese halide, (1-mPQBr)₂MnBr₄, and demonstrates the good light output stability of its encapsulated LED. In addition, to address the issue of weak luminescence, optimized evaporation synthesis methods and metal ion doping techniques have been proposed. Among these, the sample doped with 10% Li exhibited the highest luminescence intensity, which was a 28% improvement compared to the traditional evaporation method. The study found that the improved evaporation method enhanced the material's absorption of blue light; the ion substitution method altered the crystal structure, thereby increasing the luminescence intensity. The white light LED encapsulated by (1-mPQBr)₂MnBr₄ has a color gamut coverage of 106% NTSC, with a luminous efficacy of 112 lm/W at a drive current of 10 mA. This discovery opens the door for the application of organic-inorganic hybrid manganese halides in the field of high-color-gamut displays.
关键词:Organic-inorganic metal halides;Green phosphors;photoluminescence;LED applications
摘要:Sunlike LEDs, with their advantages of excellent spectral continuity, high color rendering index (Ra), high color fidelity (Rf), and high color saturation (Rg), have become an inevitable trend in the future of healthy lighting development. Efficient and stable multi-color phosphors are the key materials for achieving sunlike/full-spectrum LEDs. In this paper, a novel violet-excited yellow phosphor, [(Ba0.6Ca0.7Sr0.7)O2-SiO2]:Eu2+ was synthesized using a high-temperature solid-state method based on an entropy-increasing strategy. This phosphor, under 371 nm ultraviolet excitation, emits yellow light with a spectral range of 420~800 nm and a central wavelength of 560 nm, achieving an external quantum efficiency of 75%. Notably, under 400 nm violet excitation, the luminous intensity of the phosphor can reach 88.2% of its maximum emission at the optimal excitation wavelength, achieving an external quantum efficiency of 53.0%, demonstrating good adaptability to violet chips. Finally, a sunlike LED was fabricated by combining the [(Ba0.6Ca0.7Sr0.7)O2-SiO2]:Eu2+ yellow phosphor with commercial red, blue, and cyan phosphors and coupling with a 410 nm violet LED chip. The resulting LED exhibited high color rendering index (Ra = 96), high color saturation index (Rg = 100), and high color fidelity index (Rf = 95.1). The entropy-increasing strategy proposed in this study also provides a new approach for the development of novel high-efficiency and stable phosphor systems.
摘要:Since the discovery of mechanoluminescence, it has undergone decades of development and has been widely applied in various fields, including sensing, anti-counterfeiting, and structural detection. However, the application of mechanoluminescent materials in biomedical fields is still in its early stages, with relatively few reports reported. This paper first introduces advanced strategies for synthesizing mechanoluminescent materials and systematically discusses several typical mechanoluminescence mechanisms, with a focus on trap-controlled mechanoluminescence. Additionally, it presents the recently developed novel mechanoluminescence models based on chemiluminescence and bioluminescence. Furthermore, this paper provides a comprehensive overview of the applications of mechanoluminescent materials in biomedical fields, including biosensing, near-infrared bioimaging, optogenetic neuromodulation, and disease treatment. Lastly, this paper summarizes the major challenges faced by mechanoluminescent materials in biomedical applications and proposes their future research directions.
ZUO Xiaoyi, WU Tong, WANG Shaohan, WANG Ding, TANG Yiwen, Wang Dong, SHI Yun, HAN Sancan, CHEN Junfeng
DOI:10.37188/CJL.20240346
摘要:The next generation of high energy physics experiments and time-of-flight positron emission tomography imaging require scintillators with ultrafast decay ranging from nanoseconds (ns) to picoseconds (ps) to fulfill the need for higher time resolution. The Cs2ZnCl4 crystal stands out due to its remarkable advantages of an ultrafast decay without slow component, a low melting point, non-hygroscopic, as well as the proper emission band matching well with commercial photomultiplier tube. In recent years, Cs2ZnCl4 crystal has attracted worldwide research interests as a kind of ultrafast scintillator with core-valence luminescence (CVL). The review emphasis on the research history and progress of Cs2ZnCl4 crystals, including luminescence mechanism, physicochemical properties, crystal growth techniques and the scintillation properties. Particularly, emphasis is placed on the optical and scintillation properties of Cs2ZnCl4 crystal. The application potential of Cs2ZnCl4 crystals as a unique ultrafast scintillator is then concluded.
摘要:The afterglow imaging technology avoids the interference of biological tissue autofluorescence and has ultra-high imaging signal-to-noise ratio, showing great application prospects in the field of biomedical imaging. The generation and decomposition of high-energy dioxetane intermediates enable the storage and release of light energy. As a result, afterglow materials that can be oxidized by singlet oxygen to form dioxetane intermediates exhibit prolonged luminescence. The dioxetane intermediates-based afterglow luminescent materials has good biocompatibility and structural diversity, and can extend the afterglow emission range and enhance afterglow intensity through structural modification, achieving more accurate afterglow imaging. This review summarizes the luminescence mechanism and construction strategies of dioxetane-based afterglow materials, introduces the design strategies of multi-component and single-molecule afterglow materials, and discusses in detail the reported afterglow substrates and their luminescence mechanisms. Moreover, the design strategies of afterglow nanoprobes and their latest developments in disease diagnosis, biosensing, and imaging were discussed and classified. Finally, the challenges and future development prospects of this type of material in clinical translation were analyzed.
摘要:Passive radiative cooling has garnered significant attention due to its potential in energy conservation and environmental regulation. However, the cooling power of Passive radiative cooling is inherently limited by Planck's law. Recent research found that positive photon chemical potential has the potential to enhance radiation power, albeit it necessitates an active energy input. This study proposes a theoretical model integrating a heat engine and a thermal radiation diode (TRD) that can passively achieve positive photon chemical potential, thereby enhancing radiative cooling power. The results demonstrate that the integrated system of TRD and thermoelectric generator (TEG) can effectively improve cooling power. Theoretical results indicate that the TRD-Carnot engine coupled system has the potential to achieve a peak radiation power density of 606.3 W/m² when the Carnot engine operates at 300 K (hot reservoir) and 280 K (cold reservoir). The peak radiation power density has the potential to exceed the ideal blackbody radiation density at 300 K, which is 459 W/m2. This study theoretically confirms that the synergistic effect between TRD and heat engine provides a novel approach for enhancing radiative cooling performance.
关键词:photon chemical potential;thermoradiative diodes;electroluminescence cooling;radiative cooling
LIU Zhen, ZHANG Yijia, CHENG Hezhen, ZHANG Chong, FU Xinpeng, FU Xihong
DOI:10.37188/CJL.20250017
摘要:Picosecond lasers are characterized by high pulse energy, high power density, and low thermal effects, demonstrating exceptional performance in micro-machining, precision cutting, and other applications. They are widely utilized in fields such as laser processing, aerospace, and biomedical engineering. Passive Q-switching technology, which achieves pulsed laser output by modulating the Q-factor of the resonator, has become a key method for generating picosecond lasers. This paper reviews the application of passive Q-switching technology in obtaining picosecond pulses, with a focus on three distinct technical approaches: microchip structures, SESAMs (semiconductor saturable absorber mirrors) as saturable absorbers, and bonded crystals, all aimed at shortening the cavity length to achieve picosecond pulses while enhancing other performance aspects. It summarizes recent significant advancements in 1064 nm passive Q-switching technology within picosecond pulsed laser systems and provides insights into the future development and applications of passive Q-switched picosecond lasers.
Gao Mengdi, Cao Qing, Song Shiyu, Liu Kaikai, Shan Chongxin
DOI:10.37188/CJL.20240344
摘要:The emission of ZnO in the visible light region has a long and complicated history. In previous studies, researchers have attributed the emissions in the visible light region to the existence of impurities or structural defects (such as oxygen vacancies, zinc vacancies, zinc interstitials, surface states). However, there are still certain differences. For quantum dots (QDs) with good crystallinity and high luminous efficiency, it is contradictory to attribute their emission mechanism in the visible light region to the defect model. This paper proposes a multiple bright singlet/triplet hybrid self-trapped exciton emission model for ZnO QDs, whose luminescence range covers from 400 nm to 700 nm. The Photoluminescence Quantum Yield (PLQY) of singlet exciton and triplet exciton emission are 45.56% and 22.44%, respectively. Thanks to their good transparency and bright triplet excitons, we have explored the X-ray detection imaging by ZnO QDs as scintillator. The lowest detection limit of the ZnO QD scintillator for X-ray is as low as 64.89 nGy/s, which is lower than the dose required for X-ray medical imaging. This work puts forward a new model for visible emission in ZnO QDs, demonstrating a new type of transparent scintillator and their potential application in X-ray imaging.
“Lutetium oxide (Lu2O3) research progresses in the field of laser crystal materials. Expert xx explored the optimal conditions for investigating dislocation defects of Lu2O3 crystals, which provides solutions to improve crystal quality.”
Li Guoxin, Wang Pei, Mu Wenxiang, Zhao Lili, Wang Shanpeng, Yin Yanru
DOI:10.37188/CJL.20250024
摘要:Lutetium oxide (Lu2O3) is recognized as a potential laser crystal material, and it is noted for its high thermal conductivity, low phonon energy, and strong crystal field. Nevertheless, its high melting point of 2450 ℃ induces significant temperature gradients, resulting in a proliferation of defects. The scarcity of comprehensive research on this crystal’s defects hinders the enhancement of crystal quality. In this study, we employed the chemical etching method to examine the etching effects on Lu2O3 crystals under various conditions and to identify the optimal conditions for investigating the dislocation defects of Lu2O3 crystals (‘70 wt% H3PO4, 160 °C, 15-18min’). The morphologies of dislocation etch pits on the (111)- and (110)-oriented Lu2O3 wafers were characterized using microscopy, scanning electron microscopy and atomic force microscopy. This research addresses the gap in understanding Lu2O3 line defects and offers guidance for optimizing the crystal growth process and improving crystal quality.
“In the field of near-infrared photodetectors, researchers have made significant progress. By introducing multifunctional molecules DBM, they have modulated the crystallization of Sn-Pb mixed perovskites and retarded the oxidation of Sn2+, thereby significantly enhancing film quality. This work advances the development of Sn-Pb mixed perovskites for NIR detection and paves the way for their commercialization.”
LIU Jingjing, YANG Zhichun, BAO Haotian, MENG Xingqin, QI Minru, YANG Changgang, ZHANG Guofeng, QIN Chengbing, XIAO Liantuan, JIA Suotang
DOI:10.37188/CJL.20250027
摘要:Tin-lead (Sn-Pb) mixed perovskites are extensively investigated in near-infrared (NIR) photodetectors (PDs) owing to their excellent photoelectric performance. However, achieving high-performance Sn-Pb mixed PDs remains challenging, primarily because of the rapid crystallization and the susceptibility of Sn2+ to oxidation. To address these issues, this study introduces the multifunctional molecules 2,3-difluorobenzenamine (DBM) to modulate the crystallization of Sn-Pb mixed perovskites and retard the oxidation of Sn2+, thereby significantly enhancing film quality. Compared with the pristine film, Sn-Pb mixed perovskite films modulated by DBM molecules exhibit a highly homogeneous morphology, reduced roughness and defect density. The self-powered NIR PDs fabricated with the improved films have a spectral response range from 300 to 1100 nm, a peak responsivity of 0.51 A W-1, a specific detectivity as high as 2.46 × 1011 Jones within the NIR region (780 to 1100 nm), a linear dynamic range exceeding 152 dB, and ultrafast rise/fall time of 123/464 ns. Thanks to the outstanding performance of PDs, the fabricated 5 × 5 PDs array demonstrates superior imaging ability in the NIR region up to 980 nm. This work advances the development of Sn-Pb mixed perovskites for NIR detection and paves the way for their commercialization.
JIANG Qingyi, CHEN Chunlin, LI Shan, CHEN Yinghe, DONG Guanchen, ZHANG Bangcui, GAO Shulin, WANG Jianfei, YANG Yanhua
DOI:10.37188/CJL.20250021
摘要:To explore the optical properties and practical applications of biphenyl-based Schiff base compounds, two Schiff base compounds, 3,3''-(4,4'''-bis(diphenylamino)-[1,1':4',1'':4'',1'''-quaterphenyl]-2'',3'-diyl)bis(azanylylidene)bis(methanylylidene)bis([1,1'-biphenyl]-4-ol) (LFP-1) and 3,3''-([1,1':4',1'':4'',1'''-quaterphenyl]-2'',3'-diyl)bis(azanylylidene)bis(methanylylidene)bis([1,1'-biphenyl]-4-ol) (LFP-2), were designed and synthesized. These compounds were constructed using 4,4'-dibromobiphenyl-2,2'-diamine as the molecular skeleton, which the π-conjugated systems were extended at the 4,4'-positions and lateral groups were introduced at the 2,2'-positions. Optical performance testing revealed that both compounds exhibited excited-state intramolecular proton transfer (ESIPT) and aggregation-induced emission (AIE) properties in dimethyl sulfoxide/water mixtures. Furthermore, these compounds had the ability to visualize latent fingerprints on three types of substrates: blades, tinfoil, and stainless steel. The first-, second-, and third-level fingerprint details were clearly identifiable, highlighting their potential for practical applications in forensic science. These findings lay a solid foundation for the design of advanced materials for latent fingerprint visualization.
“In the realm of aqueous zinc-ion electrochromic technology, a breakthrough has been made. Expert researchers have developed ordered WO3 nanowire films using a one-step grazing angle deposition method, which significantly enhances response speed and optical contrast. This advancement offers a simple and effective strategy to improve the performance of tungsten oxide-based aqueous zinc ion electrochromic materials and devices, addressing the challenges of slow ion diffusion kinetics and limited optical contrast.”
CHEN Shuo, XING Kaixiao, LV Ying, YAO Xinxin, LI Pan, GUO Xiaoyang, WANG Tienan, LI Xiaotian, LIU Xingyuan
DOI:10.37188/CJL.20250031
摘要:Aqueous zinc-ion electrochromic (EC) technology, boasting the capability to fulfill both safety and cost-effectiveness requirements, is garnering extensive attention in various application areas including smart windows, thermal management, displays, and camouflage. However, typical inorganic EC materials, such as tungsten oxides (WO3), often suffer from slow ion diffusion kinetics and limited optical contrast within the aqueous Zn2+ electrolyte because of the large size and strong Coulombic interactions of the Zn2+, which limits their wide applicability. Here, ordered WO3 nanowire films, constructed by a one-step grazing angle deposition method, is demonstrated to boost the response speed and optical contrast during EC phenomena. Compared with dense films, the ordered WO3 nanowire films with a porosity of 44.6% demonstrates anti-reflective property and excellent comprehensive EC performance, including fast response times (3.6 and 1.2 s for coloring and bleaching, respectively), large optical contrast (66.6% at 700 nm) and high coloration efficiency (64.3 cm2 C-1). A large-area prototype EC device (17 cm × 12 cm) with fast color-switching is also successfully achieved. Mechanistic studies show that the improved performance is mainly due to the ordered porous nanowire structures, which provides direct electron transfer paths and sufficient interfacial contacts, thus simultaneously enhancing the electrochemical activity and fast redox kinetics. This study provides a simple and effective strategy to improve the performance of tungsten oxide-based aqueous zinc ion EC materials and devices.
摘要:Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) have demonstrated significant application potential in fields such as plant lighting and bioimaging. The luminescence efficiency and thermal stability of near-infrared phosphors directly determine device performance, emphasizing the importance of developing highly efficient and thermally stable near-infrared phosphors. In this study, we synthesized an efficient near-infrared phosphor, Y3InyGa5-x-yO12:xCr3+, with a garnet structure using a high-temperature solid-state method. The emission spectrum ranges from 600 to 1000 nm. By adjusting the In3+ content, we achieved spectral tuning and attained an internal quantum efficiency of up to 95.8%. Additionally, the phosphor exhibits excellent thermal stability. Experimental results show that at 423 K, the luminescence intensity remains at 83.6% of the room-temperature value. Finally, we fabricated high-efficiency NIR pc-LED devices by combining this phosphor with commercial blue LEDs, achieving a near-infrared output power of 273.5 mW under a 350 mA current drive. These results demonstrate that this series of near-infrared phosphors and NIR pc-LED devices holds high application potential.
Li Dan, Liu Mingrui, Wang Shuai, Jia Yuping, Zang Hang, Sun Rui, Zhang Shanli, Sun Xiaojuan, Li Dabing
DOI:10.37188/CJL.20250023
摘要:lanthanide ions have abundant luminescent energy levels, with their luminescence intensity and wavelength affected by the lattice symmetry. The regulation of luminescence properties via controllable lattice fields can be realized by altering electric fields and stress. Ferroelectric materials have non-volatile spontaneous polarization, and its direction can be reversed or reoriented by electric fields. Doping lanthanide ions as luminescence centers into ferroelectric materials and utilizing the ferroelectric polarization field for dynamic regulation of lanthanide ions' luminescence wavelength and intensity can significantly improve the performance of semiconductor optoelectronic devices. AlScN, with its dynamically tunable high remanent polarization, large bandgap, and high compatibility with CMOS processes, offers new opportunities for constructing novel luminescent devices with multifunctional ferroelectric regulation. This paper investigated the effects of Er3+ doping concentrations on the luminescence and ferroelectric properties of AlScN films. The Er3+ doping concentration rises, and more luminescence centers are incorporated, effectively enhancing the luminescence potential. Notably, a marked increase in luminescence of Er3+-doped AlScN films was achieved at doping concentrations of 3.6% to 9.4%. However, when the doping concentration exceeded 10%, a quenching effect led to the decrease of luminescence, highlighting the importance of precisely controlling the doping limit for optimal performance. Although the increase in Er³⁺ doping concentration slightly degraded the performance of AlScN, the remanent polarization remained above 80 μC/cm² at a concentration of 9.4%, demonstrating the coexistence of luminescence and robust ferroelectric performance in Er3+-doped AlScN films. This research fills the gap regarding lanthanide ions-doped AlScN films, laying a solid foundation for the development of highly integrated, multifunctional luminescent devices and potentially catalyzing innovation in the optoelectronic domain.
摘要:Scintillators have numerous applications in the fields of precision detection of high-energy physics, nuclear physics research, medical diagnosis, industrial flaw detection, and national defense security monitoring. However, traditional single crystal scintillators are difficult to realize large-scale preparation due to their complex processes, high costs, and limited volume size. In recent years, glass scintillators have stood out due to their highly mature production processes, low costs, good efficient luminescence, and excellent plasticity. This paper elaborates on the luminescence mechanism of glass scintillators and enumerates key parameters for evaluating their scintillation performance. Based on their components and structural characteristics, glass scintillators are mainly classified into oxide glass scintillators, halide glass scintillators, and micro/nano-crystalline composite glass scintillators. This review focuses on the overview of the latest research results and development trend of Glass Scintillator for X-ray, and summarizes the high-density glass scintillator,Finally the future development trend of Glass Scintillator for X-ray is summarized and outlooked.
LIAN Ningxiao, HUANG Guobin, TIAN Kaili, HUANG Hanjun, QU Yaru, WANG Jie, SU Yupeng, PAN Hongfei, REN Xiangkui
DOI:10.37188/CJL.20250018
摘要:Chiral luminescent materials have wide application prospect in the field of optics. However, the precise construction of circularly polarized luminescent materials and the elucidation of the intrinsic relationship between their supramolecular structures and circularly polarized luminescence properties remain key scientific challenges that urgently need to be addressed in the field of chiral luminescent materials. In this study, we use perylene diimide (PDI) as the model compound, to introduce chiral substituents and steric hindrance substituents into the PDI system, and then synthesize two chiral PDI derivatives (namely POSS-PDI-B6 and C10C8-PDI-B6) with gelation property. Their supramolecular structures and photophysical properties were comprehensively characterized using ultraviolet-visible absorption spectroscopy, fluorescence spectroscopy, X-ray diffraction and circularly polarized luminescence spectroscopy, respectively. The experimental results demonstrate that both POSS-PDI-B6 and C10C8-PDI-B6 are capable of forming luminescent gels. Under the synergistic effects of steric hindrance from POSS and alkyl chain substituents, as well as chiral induction from the B6 substituent, the PDI derivatives can assemble into helical supramolecular structures with chiral characteristic, thereby endowing the PDI gels with excellent circularly polarized luminescence property. These results provide valuable theoretical and experimental reference for the design and preparation of chiral optical materials.
摘要:This study employed a thulium-doped fluorotellurite glass fiber as the gain medium and utilized dual-wavelength lasers at 1400 nm and 1570 nm as the pump sources to establish a theoretical model of a 2.3 μm fiber laser. Through numerical simulations, the effects of the gain fiber length, fiber loss, and pump power on the performance parameters of the 2.3 μm laser were systematically investigated. The simulation results showed that when the length of the thulium-doped fluorotellurite glass fiber was 2.3 m, the pump power at 1400 nm was 30 W, and the pump power at 1570 nm was 2.4 W, the output power of the 2.3 μm laser reached 14.7 W, with a corresponding conversion efficiency of 45.37%. This research provides theoretical guidance for the development of high-power 2.3 μm thulium-doped fiber lasers.
DENG Yujie, QIAN Chengyu, ZHANG Jiaheng, WANG Qian, JIN Zhiwen
DOI:10.37188/CJL.20250013
摘要:Glass scintillators are highly stable detection materials that play a crucial role in medical imaging, security inspection, and various other applications. They also provide enhanced adaptability and detection performance in extreme environments, such as deep-sea, deep underground, deep space, and nuclear reactor. However, the development and application of commercially available GS series glass scintillators are hindered by their relatively low light yield and narrow application range (neutron field), which are insufficient to meet the demands of X-ray detection applications. Consequently, there is an urgent need to develop a series of glass scintillators with superior X-ray detection performance to satisfy the requirements in X-ray and related fields. In recent years, significant progress has been made in the development of X-ray-related glass scintillator materials, the exploration of their mechanisms, and the expansion of their applications. However, few studies have specifically focused on X-ray detection glass scintillators as a distinct topic, addressing their development and applications. This paper provides a brief overview of the historical development, material classification, detection principles, detection parameters, and fabrication processes of X-ray detection glass scintillators. It particularly emphasizes the design concepts, research advancements, detection performance, and challenges associated with rare-earth-based and perovskite-type glass scintillators. Additionally, the paper explores future directions and challenges in X-ray detection glass scintillators, taking into account common issues and the current state of development in this field.
关键词:Glass Scintillators;X-ray Detectors;Rare-earth Luminescent Type;Perovskite Type
KANG Wenyu, YIN Jun, HUANG Jiaxin, XIANG Leilei, KANG Junyong
DOI:10.37188/CJL.20240321
摘要:To face the challenge of low light extraction in AlGaN-based deep ultraviolet (DUV) LEDs, a quartz lens encapsulation structure bonded with fluorine resin was designed to effectively resolve the significant internal total reflection (ITR) losses when photons emitted from the sapphire substrate of the flip-chip LED. This work demonstrated that the thin interfacial fluorine resin bonding layer could form a matched refractive index transition layer, maximizing light extraction. For typical 250-nm DUV LEDs, 28% light output intensity could be enhanced. Additionally, a ceramic packaging substrate with reflective sidewalls was designed to improve the extraction and convergence of transverse magnetic (TM)-mode emission from the DUV LEDs. Simulation results indicated significant improvements across different wavelengths of DUV LEDs. Compared to the reference sample (<50% forward light output efficiency), the design of reflective packaging substrates could raise the efficiency to 94%. The efficiency enhancement was more significant for LEDs with ≤250 nm wavelengths, caused by the higher proportion of TM-mode emission. Further optimization of the quartz lens curvature was able to effectively manipulate the emission convergence characteristics for LEDs, which meet the light field distribution requirements for various applications such as surface disinfection.
WU Xuan, GAO Runlong, LIU Zhiyu, ZHONG Xiangli, LIU Linyue, OUYANG Xiaoping
DOI:10.37188/CJL.20240312
摘要:High-performance semiconductor X-ray detectors prefer outstanding characteristics including low detection of limit, low dark current, high sensitivity, fast response time, high radiation hardness and so on. Wide-bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), diamond, gallium oxide (Ga2O3), and zinc oxide (ZnO) exhibit exceptional properties, including a wide bandgap, high electron mobility, high breakdown field strength, high saturated carrier drift velocity, and large displacement energy. These characteristics enable them to demonstrate superior performance in X-ray detection, meeting the requirements for high-performance semiconductor X-ray detectors and making them highly promising candidates for such applications.As a result, they have emerged as promising candidates for advanced X-ray detectors.In this paper, the electrical properties, preparation technology and detection performance of SiC, GaN, diamond, Ga₂O₃, ZnO X-ray detectors are introduced, and the latest research is discussed. Meanwhile, future research directions and potential applications of wide-bandgap semiconductor X-ray detectors in medical imaging, industrial detection and space exploration conducts in-deep thinking.