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Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution
Synthesis and Properties of Materials | 更新时间:2026-09-12
    • Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution

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    • Chinese Journal of Luminescence   Vol. 45, Issue 11, Pages: 1839-1848(2024)
    • DOI:10.37188/CJL.20240194    

      CLC: O482.31
    • Received:19 August 2024,

      Revised:2024-08-28,

      Published:25 November 2024

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  • YANG Yichen,LYU Wei,KANG Xiaojiao.Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution[J].Chinese Journal of Luminescence,2024,45(11):1839-1848. DOI: 10.37188/CJL.20240194. DOI:

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Related Author

Yang Yi-chen
Wei Lü
Kang Xiao-jiao
SUO Huixian
SONG Zhi
KANG Xiaojiao
LI Xinming
ZHOU Fei

Related Institution

School of Electrical Engineering and Intelligentization, Dongguan University of Technology
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University
School of Electrical Engineering and Intelligentization, Dongguan University of Technology
Chongqing Key Laboratory of Dedicated Quantum Computing and Quantum Artificial Intelligence, School of Electronic and Engineering, Chongqing University of Posts and Telecommunications
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