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Low Operating Voltage IGZO Thin-film Transistor Based on Ultrathin Al2O3 Gate Insulator and Its Application in Common-source Amplifier
Device Fabrication and Physics | 更新时间:2020-08-12
    • Low Operating Voltage IGZO Thin-film Transistor Based on Ultrathin Al2O3 Gate Insulator and Its Application in Common-source Amplifier

    • Chinese Journal of Luminescence   Vol. 41, Issue 4, Pages: 451-460(2020)
    • DOI:10.3788/fgxb20204104.0451    

      CLC: TN321+.5
    • Published:5 April 2020

      Published Online:18 February 2020

      Received:26 December 2019

      Revised:22 January 2020

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  • ZHANG Hao, LI Jun, ZHAO Ting-ting etc. Low Operating Voltage IGZO Thin-film Transistor Based on Ultrathin Al<sub>2</sub>O<sub>3</sub> Gate Insulator and Its Application in Common-source Amplifier[J]. Chinese Journal of Luminescence, 2020,41(4): 451-460 DOI: 10.3788/fgxb20204104.0451.

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