Highly Flexible Green Light-emitting Diode Based on CsPbBr3 Perovskite Quantum Dots

GUO Jie; LU Min; SUN Si-qi; HU Qiang; ZHANG Jia; BAI Xue

doi:10.3788/fgxb20204103.0233

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Highly Flexible Green Light-emitting Diode Based on CsPbBr₃ Perovskite Quantum Dots

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Highly Flexible Green Light-emitting Diode Based on CsPbBr₃ Perovskite Quantum Dots
- Chinese Journal of Luminescence Vol. 41, Issue 3, Pages: 233-240(2020)
- 作者机构：
  
  吉林大学电子科学与工程学院, 集成光电子学国家重点联合实验室, 吉林长春 130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61822506,11674127,1197414)
- DOI：10.3788/fgxb20204103.0233
  CLC： O482.31
- Published：5 March 2020，
  
  Published Online：8 January 2020，
  
  Received：3 January 2020，
  
  Revised：15 January 2020，
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郭洁, 陆敏, 孙思琪等. 基于CsPbBr3钙钛矿量子点的高柔性绿光发光二极管[J]. 发光学报, 2020,41(3): 233-240

GUO Jie, LU Min, SUN Si-qi etc. Highly Flexible Green Light-emitting Diode Based on CsPbBr3 Perovskite Quantum Dots[J]. Chinese Journal of Luminescence, 2020,41(3): 233-240
郭洁, 陆敏, 孙思琪等. 基于CsPbBr3钙钛矿量子点的高柔性绿光发光二极管[J]. 发光学报, 2020,41(3): 233-240 DOI： 10.3788/fgxb20204103.0233.

GUO Jie, LU Min, SUN Si-qi etc. Highly Flexible Green Light-emitting Diode Based on CsPbBr3 Perovskite Quantum Dots[J]. Chinese Journal of Luminescence, 2020,41(3): 233-240 DOI： 10.3788/fgxb20204103.0233.

摘要

众所周知，柔性信息显示将在未来的光电应用中发挥重要作用。然而，由于电极材料和柔性衬底的选择有限，制备高效、稳定的柔性发光二极管仍然存在巨大的挑战。以光聚合物作为柔性衬底、CsPbBr

量子点作为发光层，成功地制备了柔性钙钛矿发光二极管。为了改善电子的注入和传输，采用Ag作阴极。结果表明，高柔性的钙钛矿发光二极管的最高亮度为10 325 cd/m

且具有高色纯度（FWHM=19 nm）。此外，制备的钙钛矿发光二极管具有良好的柔性和机械延展性。在大约180的弯曲角度下反复弯曲100次后，仍然保持着良好的器件性能。该研究为未来柔性显示器的应用奠定了研究基础。

Abstract

Flexible information displays have the promising potential for the future optoelectronic application. However

achieving the highly efficient and stable flexible light-emitting diodes (LEDs) is still a big challenge due to the limited choices of electrode materials and flexible substrates. Herein

the flexible perovskite light-emitting diodes (Pe-LEDs) by combining the flexible substrate based on a photopolymer with the CsPbBr

quantum dots (QDs) emitting layer were fabricated. In order to improve electrons injection and transport

Ag was used as the cathode. As a result

the green light emitting Pe-LEDs with high luminance of 10 325 cdm

-2

and high color purity with the full-width-at-half-maximum (FWHM) of 19 nm were obtained. In addition

the Pe-LEDs exhibit good flexibility and mechanical ductility

and the as-prepared flexible device still maintains its optoelectronic performance even after repeated bending 100 cycles under a bending angle of about 180. The research presents a further step toward the future application of flexible displays.

关键词

CsPbBr3量子点光聚合物银电极柔性发光二极管

Keywords

CsPbBr3 QDsphotopolymerAg electrodeflexible light-emitting diode

references

LU M,ZHANG X Y,ZHANG Y,et al.. Simultaneous strontium doping and chlorine surface passivation improve luminescence intensity and stability of CsPbI3 nanocrystals enabling efficient light-emitting devices[J]. Adv. Mater., 2018,30(50):1804691.

SONG J Z,LI J H,LI X M,et al.. Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides (CsPbX3)[J]. Adv. Mater., 2015,27(44):7162-7167.

CAO Y,WANG N N,TIAN H,et al.. Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures[J]. Nature, 2018,562(7726):249-253.

LU M,ZHANG Y,WANG S X,et al.. Metal halide perovskite light-emitting devices:promising technology for next-generation displays[J]. Adv. Funct. Mater., 2019,29(30):1902008.

PAN J,QUAN L N,ZHAO Y B,et al.. Highly efficient perovskite-quantum-dot light-emitting diodes by surface engineering[J]. Adv. Mater., 2016,28(39):8718-8725.

GAO Y B,WU Y J,LU H B,et al.. CsPbBr3 perovskite nanoparticles as additive for environmentally stable perovskite solar cells with 20.46% efficiency[J]. Nano Energy, 2019,59:517-526.

ZHANG X Y,SUN C,ZHANG Y,et al.. Bright perovskite nanocrystal films for efficient light-emitting devices[J]. J. Phys. Chem. Lett., 2016,7(22):4602-4610.

ABATE A,SALIBA M,HOLLMAN D J,et al.. Supramolecular halogen bond passivation of organic-inorganic halide perovskite solar cells[J]. Nano Lett., 2014,14(6):3247-3254.

BI C H,KERSHAW S V,ROGACH A L,et al.. Improved stability and photodetector performance of CsPbI3 perovskite quantum dots by ligand exchange with aminoethanethiol[J]. Adv. Funct. Mater., 2019,29(29):1902446.

SUTHERLAND B R,SARGENT E H. Perovskite photonic sources[J]. Nat. Photon., 2016,10(5):295-302.

KANG C H,DURSUN I,LIU G Y,et al.. High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication[J]. Light:Sci. Appl., 2019,8(1):94.

王巍,李一,宁平凡,等. 广色域钙钛矿量子点/荧光粉转换白光LED[J].发光学报,2018,39(5):627-632. WANG W,LI Y,NING P F,et al.. Perovskite quantum dot/powder phosphor converted white light LEDs with wide color gamut[J]. Chin. J. Lumin., 2018,39(5):627-632. (in Chinese)

PROTESESCU L,YAKUNIN S,BODNARCHUK M I,et al.. Nanocrystals of cesium lead halide perovskites (CsPbX3,X=Cl,Br,and I):novel optoelectronic materials showing bright emission with wide color gamut[J]. Nano Lett., 2015,15(6):3692-3696.

WANG N N,CHENG L,SI J J,et al.. Morphology control of perovskite light-emitting diodes by using amino acid self-assembled monolayers[J]. Appl. Phys. Lett., 2016,108(14):141102.

SHEN X Y,ZHANG Y,KERSHAW S V,et al.. Zn-alloyed CsPbI3 nanocrystals for highly efficient perovskite light-emitting devices[J]. Nano Lett., 2019,19(3):1552-1559.

HASSAN Y,SONG Y,PENSACK R D,et al.. Structure-tuned lead halide perovskite nanocrystals[J]. Adv. Mater., 2016,28(3):566-573.

DE ROO J,IBEZ M,GEIREGAT P,et al.. Highly dynamic ligand binding and light absorption coefficient of cesium lead bromide perovskite nanocrystals[J]. ACS Nano, 2016,10(2):2071-2081.

LU M,ZHANG X Y,BAI X,et al.. Spontaneous silver doping and surface passivation of CsPbI3 perovskite active layer enable light-emitting devices with an external quantum efficiency of 11.2%[J]. ACS Energy Lett., 2018,3(7):1571-1577.

YANTARA N,BHAUMIK S,YAN F,et al.. Inorganic halide perovskites for efficient light-emitting diodes[J]. J. Phys. Chem. Lett., 2015,6(21):4360-4364.

CHOI M K,YANG J,KANG K,et al.. Wearable red-green-blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing[J]. Nat. Commun., 2015,6(1):7149.

LEE C H,KIM Y J,HONG Y J,et al.. Flexible inorganic nanostructure light-emitting diodes fabricated on graphene films[J]. Adv. Mater., 2011,23(40):4614-4619.

BADE S G R,LI J Q,SHAN X,et al.. Fully printed halide perovskite light-emitting diodes with silver nanowire electrodes[J]. ACS Nano, 2016,10(2):1795-1801.

KIM T H,CHO K S,LEE E K,et al.. Full-colour quantum dot displays fabricated by transfer printing[J]. Nat. Photon., 2011,5(3):176-182.

JI C Y,LU M,WU H,et al.. 1,2-ethanedithiol treatment for AgIn5S8/ZnS quantum dot light-emitting diodes with high brightness[J]. ACS Appl. Mater. Interfaces, 2017,9(9):8187-8193.

HAN T H,LEE Y,CHOI M R,et al.. Extremely efficient flexible organic light-emitting diodes with modified graphene anode[J]. Nat. Photon., 2012,6(2):105-110.

LIU Y F,FENG J,CUI H F,et al.. Fabrication and characterization of Ag film with sub-nanometer surface roughness as a flexible cathode for inverted top-emitting organic light-emitting devices[J]. Nanoscale, 2013,5(22):10811-10815.

ZHANG X Y,LIN H,HUANG H,et al.. Enhancing the brightness of cesium lead halide perovskite nanocrystal based green light-emitting devices through the interface engineering with perfluorinated ionomer[J]. Nano Lett., 2016,16(2):1415-1420.

LEE K H,LEE J H,SONG W S,et al.. Highly efficient,color-pure,color-stable blue quantum dot light-emitting devices[J]. ACS Nano, 2013,7(8):7295-7302.

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