基于有机薄膜晶体管的光写入多级存储器 Optical Write Multi-level Memory Based on Organic Thin Film Transistor 何伟欣 HE Wei-xin 1 first-author 何立铧 HE Li-hua 1 陈惠鹏 CHEN Hui-peng 1 张国成 ZHANG Guo-cheng 1 2 福州大学 平板显示技术国家地方联合工程实验室,福建 福州,350108 福州大学 平板显示技术国家地方联合工程实验室,福建 福州,350108 福建工程学院 微电子技术研究中心,福建 福州,350118 福建工程学院 微电子技术研究中心,福建 福州,350118 由于依靠不断缩小存储单元尺寸来提升单位面积存储能力的传统方法将会面临着器件尺寸的物理极限等瓶颈，人们逐渐将目光投向了能够在单一器件上实现高密度存储的多级存储器件。本文利用有机薄膜晶体管中存在的持续光电导率（PPC）效应制备了一个光写入操作的多级存储器件，有效地避免了电写入操作对器件的接触破坏性和较大功耗问题。研究了在不同功率（60，100，150 W/cm 2 ）和不同持续时间（50~1 000 ms）700 nm光写入脉冲作用下的器件存储状态，器件在光功率为60 W/cm 2 、持续时间为100 ms的光脉冲下展现出了低至0.189 nJ的极低工作功耗。通过对器件施加16个连续光写入脉冲证实器件具有16个有效的存储状态，实现了存储容量为4 bits的多级光写入存储功能。 To increase the storage capacity per unit area, the traditional strategy is reducing the storage capacity per unit area, which will face bottlenecks such as the physical limits of device size. People are turning their attention to multi-level memory devices that can achieve high-density storage on a single device. In this paper, a multi-level memory device with optical write operation is fabricated by using the persistent photoconductivity (PPC) effect in organic thin film transistors, which effectively avoids the contact destructiveness and large work consumption of the device by the electrical write operation. The device storage state under different power (60, 100, 150 W/cm 2 ) and different duration (50-1 000 ms) 700 nm optical write pulse was studied. It exhibited extremely low operating power as low as 0.189 nJ under the optical pulse with power of 60 W/cm 2 and duration of 100 ms. When 16 consecutive optical write pulses were applied, the device showed 16 distinct effective storage state, it meant that multi-level optical write storage function with a storage capacity of 4 bits was realized in this device. 有机薄膜晶体管 多级存储 光写入存储 organic thin film transistor multi-level storage optical storage CHEN X L,ZHOU Y,ROY V A L,et al.. 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