HE Wei-xin, HE Li-hua, CHEN Hui-peng etc. Optical Write Multi-level Memory Based on Organic Thin Film Transistor[J]. Chinese Journal of Luminescence, 2020,41(1): 95-102
HE Wei-xin, HE Li-hua, CHEN Hui-peng etc. Optical Write Multi-level Memory Based on Organic Thin Film Transistor[J]. Chinese Journal of Luminescence, 2020,41(1): 95-102 DOI: 10.3788/fgxb20204101.0095.
Optical Write Multi-level Memory Based on Organic Thin Film Transistor
the traditional strategy is reducing the storage capacity per unit area
which will face bottlenecks such as the physical limits of device size. People are turning their attention to multi-level memory devices that can achieve high-density storage on a single device. In this paper
a multi-level memory device with optical write operation is fabricated by using the persistent photoconductivity (PPC) effect in organic thin film transistors
which effectively avoids the contact destructiveness and large work consumption of the device by the electrical write operation. The device storage state under different power (60
100
150 W/cm
2
) and different duration (50-1 000 ms) 700 nm optical write pulse was studied. It exhibited extremely low operating power as low as 0.189 nJ under the optical pulse with power of 60 W/cm
2
and duration of 100 ms. When 16 consecutive optical write pulses were applied
the device showed 16 distinct effective storage state
it meant that multi-level optical write storage function with a storage capacity of 4 bits was realized in this device.
关键词
有机薄膜晶体管多级存储光写入存储
Keywords
organic thin film transistormulti-level storageoptical storage
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