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Solar blind p-NiO/n-Ga2O3/p-Si ultraviolet heterojunction bipolar phototransistor with high responsivity and high external quantum efficiency
更新时间：2026-09-08

    • Solar blind p-NiO/n-Ga2O3/p-Si ultraviolet heterojunction bipolar phototransistor with high responsivity and high external quantum efficiency

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    • Chinese Journal of Luminescence   Pages: 1-8(2026)

    • DOI：10.3724/CJL.20260245    

      CLC： O482.31
    • CSTR：32170.14.CJL.20260245    

    • Online First：08 September 2026，

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  • WANG Zhe,CHENG Siyuan,LI Yihan,et al.Solar blind p-NiO/n-Ga2O3/p-Si ultraviolet heterojunction bipolar phototransistor with high responsivity and high external quantum efficiency[J].Chinese Journal of Luminescence,DOI:10.3724/CJL.20260245 CSTR: 32170.14.CJL.20260245. DOI：

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