Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser

Ao WANG; Yong-gang ZOU; Ming-yu LI; Tuo CHEN; Kai CHANG; Xiao-long WANG; Jing-li GONG; Lin-

doi:10.37188/fgxb20204108.0977

您当前的位置：

首页 >

文章列表页 >

Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser

Device Fabrication and Physics | 更新时间：2020-09-10

- Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser
- Chinese Journal of Luminescence Vol. 41, Issue 8, Pages: 977-983(2020)
- 作者机构：
  
  1.长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
  2.长春理工大学光电工程学院, 吉林长春 130022
  3.浙江大学现代光学仪器国家重点实验室, 浙江杭州 310027
- 作者简介：
- 基金信息：
  
  Jilin Province Science and Technology Development Plan;Jilin Province Science and Te
- DOI：10.37188/fgxb20204108.0977
  CLC：
扫描看全文
Ao WANG, Yong-gang ZOU, Ming-yu LI, et al. Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser. [J]. Chinese Journal of Luminescence 41(8):977-983(2020)
DOI：

Ao WANG, Yong-gang ZOU, Ming-yu LI, et al. Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser. [J]. Chinese Journal of Luminescence 41(8):977-983(2020) DOI： 10.37188/fgxb20204108.0977.

摘要

V型腔可调谐半导体激光器由于具备结构简单紧凑、性能优良等特点，在光通讯领域有着较大的应用潜力。然而，由于激光器外延结构热导率相近，用于波长调谐的热量大部分直接流失，激光器无法得到较高的调谐效率。本文通过在调谐区域加入隔热结构，设计了具有高调谐效率的V型腔可调谐激光器。利用由COMSOL Multiphysics建立的V型腔激光器温度模型，分析了隔热结构的加入对激光器各部分的温度影响。通过Rsoft建立的谐振腔光场分布，优化半波耦合器参数，使激光器具有最佳的模式选择性。结果表明，激光器主边模阈值增益差达到6.07 cm,-1,，调谐效率从0.165 nm/mW提升至0.3 nm/mW。同时，隔热结构的加入不会使激光器其他区域有明显的温升，器件性能受到的负面影响可以忽略。

Abstract

V-cavity tunable semiconductor laser has great potential in optical network because of its advantages of simplicity, compactness and high performance. However, because the thermal conductivity of epitaxial structure is similar, most of the heat for wavelength tuning is lost directly, and so the tuning efficiency of laser is low. In this paper, a V-cavity laser with high tuning efficiency is designed by adding a heat insulation structure in the tuning region of the laser. Through the temperature model of V-cavity laser built by COMSOL Multiphysics, the effect of adding thermal insulation structure on the temperature of each part of the laser is analyzed. Through the optical field distribution established by Rsoft, the proper half wave coupler parameters are selected, so that the laser has the best mode selectivity.The results show that threshold gain difference between the lowest threshold mode and the next lowest threshold mode is 6.07 cm,-1, and the tuning efficiency increases from 0.165 nm/mW to 0.3 nm/mW. Meanwhile, the addition of thermal insulation structure will not cause obvious temperature rise in other areas of the laser, and the negative impact on the device performance can be ignored.

关键词

半导体激光器波长可调谐热效应隔热结构

Keywords

semiconductor laserswavelength tunablethermal effectsthermal insulation

references

冯志庆, 白兰, 王宁, 等.基于双透镜外腔结构的窄线宽可调谐半导体激光器[J].发光学报, 2012, 33(10):1138-1142.

FENG Z Q, BAI L, WANG N, et al.. Narrow-linewidth tunable semiconductor lasers based on dual-lens external-cavity structure[J].Chin. J. Lumin., 2012, 33(10):1138-1142. (in Chinese)

李保志, 邹永刚, 王小龙, 等.宽范围可调谐内腔液晶垂直腔面发射激光器设计与研究[J].发光学报, 2018, 39(11):1621-1626.

LI B Z, ZOU Y G, WANG X L, et al.. Design and research of wide range tunable intracavity liquid crystal vertical cavity surface emitting laser[J].Chin. J. Lumin., 2018, 39(11):1621-1626. (in Chinese)

COLDREN L A. Monolithic tunable diode lasers[J].IEEE J. Selected Top. Quantum Electron., 2000, 6(6):988-999.

BUUS J, MURPHY E J. Tunable lasers in optical networks[J].J. Lightw. Technol., 2006, 24(1):5-11.

BROX O, TAWFIEQ M, DELLA CASA P, et al.. Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm[J].Electron. Lett., 2017, 53(11):744-746.

KUNDU I, DEAN P, VALAVANIS A, et al.. Continuous frequency tuning with near constant output power in coupled Y-branched terahertz quantum cascade lasers with photonic lattice[J].ACS Photonics, 2018, 5(7):2912-2920.

WAN Y T, ZHANG S, NORMAN J C, et al.. Tunable quantum dot lasers grown directly on silicon[J].Optica, 2019, 6(11):1394-1400.

LIN X F, LIU D K, HE J J. Design and analysis of 2×2 half-wave waveguide couplers[J].Appl. Opt., 2009, 48(25):F18-F23.

MENG J J, XIONG X H, XING H B, et al.. Full C-band tunable V-cavity-laser based TOSA and SFP transceiver modules[J].IEEE Photonics Technol. Lett., 2017, 29(12):1035-1038.

HE J J, LIU D K. Wavelength switchable semiconductor laser using half-wave V-coupled cavities[J].Opt. Express, 2008, 16(6):3896-3911.

DENG H Y, MENG J J, WEI W X, et al.. Wavelength tunable V-cavity laser employing integrated thin-film heaters[J].IEEE Photonics J., 2016, 8(4):1502908.

胡志朋.基于刻蚀槽的耦合腔半导体激光器研究[D].杭州: 浙江大学, 2017.

HU Z P. Coupled Cavity Semiconductor Laser Based on Deep-etched Trenches[D]. Hangzhou: Zhejiang University, 2017. (in Chinese)

HAN X M, CHENG Q, LIU F, et al.. Numerical analysis on thermal tuning efficiency and thermal stress of a thermally tunable SG-DBR laser[J].IEEE Photonics J., 2016, 8(3):1501512.

OGAWA S, IMADA M, NODA S. Analysis of thermal stress in wafer bonding of dissimilar materials for the introduction of an InP-based light emitter into a GaAs-based three-dimensional photonic crystal[J].Appl. Phys. Lett., 2003, 82(20):3406-3408.

邓浩瑜.热调谐V型腔半导体激光器及其传感应用研究[D].杭州: 浙江大学, 2016.

DENG H Y. Research on Thermally Tuned V-cavity Semiconductor Laser and Its Sensing Application[D]. Hangzhou: Zhejiang University, 2016. (in Chinese)

SHEEN M T, HO Y H, WANG C L, et al.. The joint strength and microstructure of fluxless Au/Sn solders in InP-based laser diode packages[J].J. Electron. Mater., 2005, 34(10):1318-1323.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm

Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser

Theoretical Analysis on Threshold of QW Semiconductor Lasers

OPERATING CHARACTEISSTICS OF InGaAsP/InGaP/GaAs SINGLE QUANTUM WELL HIGH POWER LASERS

Related Author

No data

Related Institution

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun

Graduate School of Chinese Academy of Sciences

Aviation University of Air Force

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Graduate School of Chinese Academy of Sciences

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰