Performance Optimization of Solution-Processed QLEDs with CuSCN Hole Injection Layer
|更新时间:2025-03-25
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Performance Optimization of Solution-Processed QLEDs with CuSCN Hole Injection Layer
增强出版
“The latest research has broken through the performance limitations of quantum dot light-emitting diodes, using CuSCN and Poly TPD to significantly improve luminescence brightness and current efficiency.”
Chinese Journal of LuminescencePages: 1-9(2025)
作者机构:
西南大学 物理科学与技术学院 微纳结构与光电子学重庆市重点实验室, 重庆 北碚 400715
作者简介:
基金信息:
the Natural Science Foundation of Chongqing(CSTB2024NSCQ-QCXMX0056;2023NSCQ-MSX0888);the Venture and Innovation Support Program for Chongqing Overseas Returnees(cx2024035)