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The Effects of Growth Parameters on the Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates
更新时间:2024-04-15
    • The Effects of Growth Parameters on the Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates

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    • 在深紫外激光器领域,研究人员通过金属有机化学气相沉积法在4H-SiC衬底上成功生长了AlGaN/AlN多量子阱结构。通过优化生长参数,实现了高内量子效率和低激射阈值,为高性能AlGaN基深紫外激光器的制备提供了重要参考。
    • Chinese Journal of Luminescence   Pages: 1-11(2024)
    • DOI:10.37188/CJL.20240080    

      CLC:
    • Published Online:15 April 2024

      Received:26 March 2024

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  • ZHANG Ruijie,GUO Yanan,WU Han,et al.The Effects of Growth Parameters on the Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20240080

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ZHU De-liang
JIA Fang
ZENG Yu-xiang
LIU Wen-jun
CAO Pei-jiang
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Related Institution

College of Materials Science and Engineering, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials
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Department of Physics, Jilin University
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