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Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates
Synthesis and Properties of Materials | 更新时间：2024-07-10
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    • Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates

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    • “在深紫外激光器领域，研究人员通过优化AlGaN/AlN多量子阱生长参数，显著提升了内量子效率和激光性能。"SiC衬底是制备高性能AlGaN基深紫外激光器的良好候选衬底"，通过金属有机化学气相沉积方法在4H-SiC衬底上成功生长了深紫外AlGaN/AlN多量子阱结构（MQWs），并系统研究了生长参数对激光结构的影响。优化后的MQWs内量子效率达到74.1%，室温下激射阈值光功率密度和线宽分别降至889 kW/cm2和1.39 nm，发光波长为248.8 nm。这一成果为深紫外激光器的研制提供了重要参考和指导。”
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    • Chinese Journal of Luminescence   Vol. 45, Issue 6, Pages: 894-904(2024)

    • DOI：10.37188/CJL.20240080    

      CLC： O482.31

    • Published：25 June 2024，

      Received：26 March 2024，

      Revised：10 April 2024，

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  • ZHANG Ruijie,GUO Yanan,WU Han,et al.Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates[J].Chinese Journal of Luminescence,2024,45(06):894-904. DOI： 10.37188/CJL.20240080.

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