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AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
Device Fabrication and Physics | 更新时间：2026-09-12

    • AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

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    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1156-1162(2024)

    • DOI：10.37188/CJL.20240045    

      CLC： TN304.23

    • Received：24 February 2024，

      Revised：2024-03-25，

      Published：25 July 2024

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  • SHEN Guowen,LU Lin,XU Fujun,et al.AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer[J].Chinese Journal of Luminescence,2024,45(07):1156-1162. DOI： 10.37188/CJL.20240045.

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Related Institution

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Changchun Institute of Optics， Fine Mechanics and Physics，Chinese Academy of Sciences
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