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On the separated multiple quantum barrier electron blocking layer for AlGaN-based deep ultraviolet light-emitting diodes
更新时间:2024-04-30
    • On the separated multiple quantum barrier electron blocking layer for AlGaN-based deep ultraviolet light-emitting diodes

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    • 针对波长小于250纳米的AlGaN基深紫外光发射二极管(DUV-LEDs)性能提升的研究取得新进展。研究团队深入探讨了分离式多量子势垒电子阻挡层(EBL)的应用。结果表明,采用分离式多量子势垒EBL的DUV-LEDs在空穴浓度和辐射复合率方面均显著优于传统阻挡层配置。分离层在EBL中形成空穴加速区,大幅提升了空穴注入效率。同时,多量子势垒样本通过提升电子势垒,有效抑制电子泄漏,显著优化了器件性能。这一研究为深紫外光电子器件的性能提升提供了新的解决方案,有望推动相关领域的技术进步。
    • Chinese Journal of Luminescence   Pages: 1-8(2024)
    • DOI:10.37188/CJL.20240045    

      CLC: TN304.23
    • Published Online:30 April 2024

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  • Shen Guo-Wen,Lu Lin,Xu Fu-Jun,et al.On the separated multiple quantum barrier electron blocking layer for AlGaN-based deep ultraviolet light-emitting diodes[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20240045

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