AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
Device Fabrication and Physics|更新时间:2024-08-06
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AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
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“Researchers have made significant progress in improving the performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with wavelengths shorter than 250 nm. By introducing a separated multiple quantum barrier electron blocking layer (EBL), they have achieved a higher hole concentration and radiative recombination rate compared to conventional block EBL configurations. The separation interlayer in the EBL forms a hole acceleration zone, significantly increasing hole injection efficiency. Additionally, the multi-quantum barrier sample suppresses electron leakage by raising the electron barrier, leading to a substantial enhancement in device performance.”
Chinese Journal of LuminescenceVol. 45, Issue 7, Pages: 1156-1162(2024)
SHEN GUOWEN, LU LIN, XU FUJUN, et al. AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer. [J]. Chinese journal of luminescence, 2024, 45(7): 1156-1162.
DOI:
SHEN GUOWEN, LU LIN, XU FUJUN, et al. AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer. [J]. Chinese journal of luminescence, 2024, 45(7): 1156-1162. DOI: 10.37188/CJL.20240045.
AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer增强出版