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AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
Device Fabrication and Physics | 更新时间:2024-08-06
    • AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

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    • Researchers have made significant progress in improving the performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with wavelengths shorter than 250 nm. By introducing a separated multiple quantum barrier electron blocking layer (EBL), they have achieved a higher hole concentration and radiative recombination rate compared to conventional block EBL configurations. The separation interlayer in the EBL forms a hole acceleration zone, significantly increasing hole injection efficiency. Additionally, the multi-quantum barrier sample suppresses electron leakage by raising the electron barrier, leading to a substantial enhancement in device performance.
    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1156-1162(2024)
    • DOI:10.37188/CJL.20240045    

      CLC: TN304.23
    • Published:25 July 2024

      Received:24 February 2024

      Revised:25 March 2024

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  • SHEN Guowen,LU Lin,XU Fujun,et al.AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer[J].Chinese Journal of Luminescence,2024,45(07):1156-1162. DOI: 10.37188/CJL.20240045.

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