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AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
Device Fabrication and Physics | 更新时间：2024-07-25
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    • AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

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    • “In the field of deep ultraviolet light-emitting diodes (DUV-LEDs), researchers have made significant progress by investigating the use of separated multiple quantum barrier electron blocking layers (EBL). This innovation has been confirmed to increase hole concentration and radiative recombination rate, significantly enhancing device performance by improving hole injection efficiency and suppressing electron leakage.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1156-1162(2024)

    • DOI：10.37188/CJL.20240045    

      CLC： TN304.23

    • Published：25 July 2024，

      Received：24 February 2024，

      Revised：25 March 2024，

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  • SHEN Guowen,LU Lin,XU Fujun,et al.AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer[J].Chinese Journal of Luminescence,2024,45(07):1156-1162. DOI： 10.37188/CJL.20240045.

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