您当前的位置：
首页 >
文章列表页 >
AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
Device Fabrication and Physics | 更新时间：2024-08-06
|

    • AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

      增强出版
    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1156-1162(2024)

    • DOI：10.37188/CJL.20240045    

      CLC： TN304.23

    • Published：25 July 2024，

      Received：24 February 2024，

      Revised：25 March 2024，

    扫 描 看 全 文

  • SHEN Guowen,LU Lin,XU Fujun,et al.AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer[J].Chinese Journal of Luminescence,2024,45(07):1156-1162. DOI： 10.37188/CJL.20240045.

  •  
  •  

0

Views

97

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Performance Enhancement of AlGaN-based Deep-ultraviolet Light Emitting Diodes by Employing Irregular H-shaped Quantum Barriers
Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate
270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers
Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells

Related Author

Dai Guang-Zhen
Gao Wen-Gen
Lv chen
Xu Fu-Jun
Lu Lin
Shen Guo-Wen
Fu-jun XU
Yi LANG

Related Institution

Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment， Ministry of Education
Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment, Ministry of Education, Anhui Polytechnic University
School of Electrical Engineering, Anhui Polytechnic University
Research Center for Wide Gap Semiconductor, School of Physics, Peking University
School of Foreign Studies, Anhui Polytechnic University
0