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Characterization and Growth Mechanisms of Low Dimensional InP Materials
Synthesis and Properties of Materials | 更新时间:2024-09-25
    • Characterization and Growth Mechanisms of Low Dimensional InP Materials

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    • Indium phosphide (InP), a significant III-V semiconductor material, has been extensively studied for its unique optical and electrical properties, with potential applications in optoelectronics, catalysis, and medicine. Researchers have successfully synthesized high-quality InP nanowires and nanopillars using chemical vapor deposition (CVD) and in-situ growth methods, respectively. The nanomaterials were characterized using SEM, EDS, XPS, Raman spectroscopy, and TEM, revealing a high degree of crystallinity and single crystal structure. The growth mechanisms were identified as vapor-liquid-solid (VLS) for nanowires and solid-liquid-solid (SLS) for nanopillars, offering new insights into the controlled preparation and large-scale production of InP nanomaterials.
    • Chinese Journal of Luminescence   Vol. 45, Issue 5, Pages: 779-793(2024)
    • DOI:10.37188/CJL.20240026    

      CLC: O482.31
    • Published:25 May 2024

      Received:30 January 2024

      Revised:20 February 2024

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  • NIU Yanping,MA Shufang,DONG Haoyan,et al.Characterization and Growth Mechanisms of Low Dimensional InP Materials[J].Chinese Journal of Luminescence,2024,45(05):779-793. DOI: 10.37188/CJL.20240026.

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Ma Shufang
Dong Haoyan
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School of Materials Science and Engineering, Shaanxi University of Science and Technology
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