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Preparation and Performance of 1.5 μm High-power Superluminescent Diodes
Device Fabrication and Physics | 更新时间：2024-04-26
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    • Preparation and Performance of 1.5 μm High-power Superluminescent Diodes

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    • “最新研究突破：采用InP/InGaAsP增益材料的超辐射发光二极管，通过优化外延结构，显著提升了光纤陀螺核心元件的性能和可靠性。”
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    • Chinese Journal of Luminescence   Vol. 45, Issue 4, Pages: 644-650(2024)

    • DOI：10.37188/CJL.20230321    

      CLC： TN312.8;O472

    • Published：05 April 2024，

      Received：16 December 2023，

      Revised：11 January 2024，

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  • XUE Zhengqun,WANG Linghua,CHEN Yuping.Preparation and Performance of 1.5 μm High-power Superluminescent Diodes[J].Chinese Journal of Luminescence,2024,45(04):644-650. DOI： 10.37188/CJL.20230321.

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