Preparation of n-Ga2O3/p-GaAs Heterojunction Solar-blind UV Photodetectors
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Device Fabrication and Physics|更新时间:2024-04-08
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Preparation of n-Ga2O3/p-GaAs Heterojunction Solar-blind UV Photodetectors
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Chinese Journal of LuminescenceVol. 45, Issue 3, Pages: 476-483(2024)
作者机构:
吉林大学 电子科学与工程学院, 集成光电子学国家重点联合实验室, 吉林 长春 130012
作者简介:
基金信息:
National Key Research and Development Program of China(2022YFB3605500);Natural Science Foundation of Jilin Province of China(20230101124JC;20220101119JC)
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Photodetectors Based on A 2D/3D Hybrid Tin Perovskite/SnO2 Heterojunction
Fabrication and Photocatalytic Properties of PbSe/TiO2 Coaxial Heterojunction Nanotubes
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Related Institution
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