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Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure
Synthesis and Properties of Materials | 更新时间:2023-11-27
    • Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure

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    • Chinese Journal of Luminescence   Vol. 44, Issue 11, Pages: 1974-1980(2023)
    • DOI:10.37188/CJL.20230213    

      CLC: O469
    • Published:05 November 2023

      Received:16 September 2023

      Revised:04 October 2023

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  • DENG Jianyang,HE Longfei,WU Zhibo,et al.Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure[J].Chinese Journal of Luminescence,2023,44(11):1974-1980. DOI: 10.37188/CJL.20230213.

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Related Author

DENG Jianyang
HE Longfei
WU Zhibo
LI Rui
XU Mingsheng
XU Xiangang
JI Ziwu
LI Min

Related Institution

School of Microelectronics, Institute of Novel Semiconductors, Shandong University
Department of Physics, Changchun Normal University
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
University of Chinese Academy of Sciences
Changchun UP Optotech Co. Ltd.
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