Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure

DENG Jianyang; HE Longfei; WU Zhibo; LI Rui; XU Mingsheng; WANG Chengxin; XU Xiangang; JI Ziwu

doi:10.37188/CJL.20230213

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Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure

Synthesis and Properties of Materials | 更新时间：2023-11-27

- Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 11, Pages: 1974-1980(2023)
- 作者机构：
  
  1.山东大学微电子学院，新一代半导体材料研究院，山东济南　250100
  2.广东省科学院半导体研究所，广东广州　510650
  3.山东浪潮华光光电子股份有限公司，山东潍坊　261061
- 作者简介：
- 基金信息：
  
  the Fundamental Research Program of Guangzhou(202201010679);National Natural Science Foundation of China(52272157)
- DOI：10.37188/CJL.20230213
  CLC： O469
- Published：05 November 2023，
  
  Received：16 September 2023，
  
  Revised：04 October 2023，
- 稿件说明：
移动端阅览
邓建阳,贺龙飞,武智波等.深紫外AlGaN基多量子阱结构中载流子辐射复合的局域特征[J].发光学报,2023,44(11):1974-1980.

DENG Jianyang,HE Longfei,WU Zhibo,et al.Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure[J].Chinese Journal of Luminescence,2023,44(11):1974-1980.
邓建阳,贺龙飞,武智波等.深紫外AlGaN基多量子阱结构中载流子辐射复合的局域特征[J].发光学报,2023,44(11):1974-1980. DOI： 10.37188/CJL.20230213.

DENG Jianyang,HE Longfei,WU Zhibo,et al.Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure[J].Chinese Journal of Luminescence,2023,44(11):1974-1980. DOI： 10.37188/CJL.20230213.

摘要

利用磁控溅射和金属有机化学气相沉积方法在

面蓝宝石衬底上生长了深紫外Al

0.38

0.62

N/Al

0.55

0.45

N多量子阱结构，并对其荧光（PL）谱进行了测量。其PL谱的激发密度依赖性测量结果表明，该量子阱的辐射过程包含了局域载流子的散射、极化场的屏蔽和局域态的填充效应；其PL谱的温度依赖性测量结果则表明，该量子阱的辐射过程包含了局域载流子的弛豫、局域载流子的热激发和自由载流子的常规热化效应。这个现象（即多种辐射复合过程的存在）在低温和弱激发测试条件下尤为显著，并且表现出该量子阱结构具有显著的局域深度非均一性和载流子的局域效果，是浅局域载流子的散射效应和深局域态的载流子填充效应共同作用所致。在较低的温度范围内，随着温度升高，该量子阱的辐射过程是由浅局域载流子的弛豫效应和深局域载流子的热激发效应共同作用的结果。这些行为被归因于阱宽起伏所诱发的局域深度的非均一性和载流子的局域效果。

Abstract

A deep-ultraviolet Al

0.38

0.62

N/Al

0.55

0.45

N multiple quantum well （MQW） structure was grown on a

-plane sapphire substrate using magnetron sputtering and metal organic chemical vapor deposition （MOCVD） methods， while the excitation density and temperature dependences of its photoluminescence （PL） spectrum were measured in the wide excitation density （0.1-500 kW/cm

） and temperature （6-300 K） ranges. The excitation density-dependent peak energies and line widths of the PL peak

from the MQWs measured at the low temperature of 6 K show that， within the low excitation density range （≤ 10 kW/cm

）， the

line width remains almost constant， while its peak energy remains almost constant first （≤ 0.5 kW/cm

） and then gradually increases with increasing the excitation density， indicating that the excitation density-dependent emission process of the MQWs is dominated first by the combined effect of the scattering effect of high-energy （shallow）-localized carriers and filling effect of low-energy （deep）-localized states， and then by the combined effect of the filling effect of medium-energy （medium-depth）- localized states and Coulomb screening effect of free carriers. However， within the high excitation density range （

10 kW/cm

）， both the

peak line width and peak energy increase significantly， indicating that the excitation density-dependent emission process of the MQWs is dominated by the filling effect of high-energy-localized states. On the other hand， the temperature-dependent peak energies and line widths of the

peak measured at the low excitation density of 0.1 kW/cm

show that， within the low temperature range （≤ 140 K）， the

line width remains almost constant， while its peak energy monotonically decreases， indicating that the temperature-dependent emission process of the MQWs may be dominated by the combined effect of the relaxation of high-energy-localized carriers and thermal excitation of low-energy-localized carriers； within the high temperature range （

140 K），

peak line width increases significantly， while its peak energy blue shifts significantly relative to Varshni curve， indicating that the temperature-dependent emission process of the MQWs is dominated by the thermal excitation of localized carriers since the relaxation of the localized carriers is gradually suppressed with increasing the temperature. The above analysis results show the strong inhomogeneity in the depths of the localized states and the localized character of the carrier recombination in the AlGaN-based MQWs due to the significant fluctuations of well widths. This conclusion is also supported by the measurement of temperature dependent-integrated PL intensity （Arrhenius plot）， because this measurement result has shown that the deep-ultraviolet AlGaN-based MQW structure has two non-radiative recombination channels with different activation energies.

关键词

深紫外LEDAlGaN多量子阱光致发光载流子局域效应

Keywords

deep-ultraviolet LEDAlGaN multiple quantum wellphotoluminescencecarrier localization effect

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Related Author

DENG Jianyang

HE Longfei

WU Zhibo

LI Rui

XU Mingsheng

XU Xiangang

JI Ziwu

CHEN Xiumei

Related Institution

School of Microelectronics， Institute of Novel Semiconductors， Shandong University

School of Flexible Electronics（Future Technologies） & Institute of Advanced Materials（IAM）， Nanjing Tech University

School of Physics， Northeast Normal University

Department of Physics， Changchun Normal University

State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

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