Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells

YU Haixin; WANG Haizhu; LANG Tianyu; LYU Minghui; XU Ruiliang; FAN Jie; ZOU Yonggang

doi:10.37188/CJL.20230202

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Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells

Synthesis and Properties of Materials | 更新时间：2023-11-27

- Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells
- Chinese Journal of Luminescence Vol. 44, Issue 11, Pages: 1967-1973(2023)
- 作者机构：
  
  1.长春理工大学重庆研究院，重庆　401135
  2.长春理工大学高功率半导体激光国家重点实验室，吉林长春　130022
- 作者简介：
- 基金信息：
  
  Jilin Science and Technology Development Plan(20210201089GX);Science and Technology Research Project of Jilin Provincial Department of Education(JJKH20220769KJ);Natural Science Foundation of Chongqing City(cstc2021jcyj⁃msxmX1060)
- DOI：10.37188/CJL.20230202
  CLC： TN304.2
- Published：05 November 2023，
  
  Received：06 September 2023，
  
  Revised：21 September 2023，
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于海鑫,王海珠,郎天宇等.GaAs插入层对InGaAs/AlGaAs量子阱发光性质的影响[J].发光学报,2023,44(11):1967-1973.

YU Haixin,WANG Haizhu,LANG Tianyu,et al.Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells[J].Chinese Journal of Luminescence,2023,44(11):1967-1973.
于海鑫,王海珠,郎天宇等.GaAs插入层对InGaAs/AlGaAs量子阱发光性质的影响[J].发光学报,2023,44(11):1967-1973. DOI： 10.37188/CJL.20230202.

YU Haixin,WANG Haizhu,LANG Tianyu,et al.Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells[J].Chinese Journal of Luminescence,2023,44(11):1967-1973. DOI： 10.37188/CJL.20230202.

摘要

InGaAs/AlGaAs多量子阱（MQWs）作为一种常见的Ⅲ⁃Ⅴ族外延材料，通常应用于半导体激光器和太阳能电池等领域。然而，由于量子阱的势阱层和势垒层生长温度不同，铟原子的偏析和多量子阱生长质量较差等问题尚未得到很好的解决。本文设计了一种砷化镓（GaAs）材料作为插入层（ISL），并用于InGaAs/AlGaAs MQWs的结构。PL、XRD、AFM测试表明，GaAs插入层保证了MQWs结构中更多的辐射复合，阻止了铟原子的偏析。但GaAs插入层的引入也会产生“局域态”，影响量子阱的发光性质。本研究可以加深对InGaAs/AlGaAs多量子阱辐射复合机制的理解，并且对引入GaAs插入层的InGaAs/AlGaAs多量子阱发光性质的研究具有重要意义。

Abstract

As a common group Ⅲ-Ⅴ epitaxial material， InGaAs/AlGaAs multi-quantum wells （MQWs） are commonly used in the fields of semiconductor lasers and solar cells. However， the segregation of indium atoms and the poor growth quality of MQWs have not been well resolved due to the growth temperature differences between the well layer and barrier layer of quantum wells. In this paper， a gallium arsenide （GaAs） material is designed as an insertion layer （ISL） to be used in the structure of InGaAs/AlGaAs MQWs. PL and XRD， AFM tests show that the GaAs ISL guarantees more radiation recombination in the MQWs structure， preventing segregation of indium atoms. However， the introduction of GaAs ISL will induce “local states”， which will affect the luminescence properties of quantum wells. This study not only can deepen the understanding of the radiation recombination mechanism of InGaAs/AlGaAs multi-quantum wells， but also has great significance in the luminescence properties study of InGaAs/AlGaAs MQWs with GaAs ISL.

关键词

InGaAs/AlGaAs多量子阱局域态插入层金属有机化合物气相外延（MOCVD）

Keywords

InGaAs/AlGaAs multiple quantum wellslocal stateinsert layermetal-organic compound gas phase epitaxy （MOCVD）

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