We present the results of a high-speed direct modulation 850 nm oxide confined vertical cavity surface emitting laser (VCSEL). Optimize the design of strain InGaAs/AlGaAs quantum wells to achieve high differential gain, and adjust the photon lifetime through surface etching to achieve response flattening. The developed VCSEL with an oxide aperture of about 7 µ m has a flat frequency response, a 3 dB modulation bandwidth of 24 GHz, and a relative noise intensity value of -155 dB/Hz. Without any pre- emphasis and equalization technology, the PAM4 modulation data transmission rate can reach 80 Gb/s.
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