Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain

DUAN Yuhan; JIANG Dayong; ZHAO Man

doi:10.37188/CJL.20230169

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Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain

Device Fabrication and Physics | 更新时间：2023-11-01

- Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 10, Pages: 1816-1823(2023)
- 作者机构：
  
  1.长春理工大学材料科学与工程学院，吉林长春　130022
  2.光电功能材料教育部工程研究中心，吉林长春　130022
- 作者简介：
- 基金信息：
  
  Science and Technology Development Plan Project of Jilin Province(YDZJ202301ZYTS266);Jilin Province Association for Science and Technology(QT202223);National Natural Science Foundation of China(62274016)
- DOI：10.37188/CJL.20230169
  CLC： O472
- Published：05 October 2023，
  
  Received：21 July 2023，
  
  Revised：07 August 2023，
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段雨晗,蒋大勇,赵曼.高增益ZnO肖特基紫外光电探测器光响应特性[J].发光学报,2023,44(10):1816-1823.

DUAN Yuhan,JIANG Dayong,ZHAO Man.Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain[J].Chinese Journal of Luminescence,2023,44(10):1816-1823.
段雨晗,蒋大勇,赵曼.高增益ZnO肖特基紫外光电探测器光响应特性[J].发光学报,2023,44(10):1816-1823. DOI： 10.37188/CJL.20230169.

DUAN Yuhan,JIANG Dayong,ZHAO Man.Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain[J].Chinese Journal of Luminescence,2023,44(10):1816-1823. DOI： 10.37188/CJL.20230169.

摘要

ZnO宽禁带半导体紫外光电探测器具有稳定性高、成本低等诸多优势，在国防、医疗、环境监测等领域具有重要的应用前景。本文采用射频磁控技术在SiO

衬底上制备了ZnO薄膜，在此基础上获得了具有高增益的金属⁃半导体⁃金属（MSM）结构的ZnO紫外光电探测器。10 V偏压下，探测器的响应度和外量子效率分别为4.90 A/W和1668%。这是由于光照情况下，半导体与金属界面处的空穴俘获产生高增益所导致的。此外，进一步研究了增益效应、外加偏压和耗尽层宽度对ZnO紫外光电探测器响应度的调控规律与影响机制，为高性能紫外光电探测器的研制与性能调控提供了重要的参考依据。

Abstract

The wide bandgap semiconductor ZnO ultraviolet （UV） photodetector has many advantages， such as high stability， low cost， and has important application prospects in fields such as national defense， medical care， and environmental monitoring. In this work， ZnO thin films were fabricated on SiO

substrate using radio frequency magnetron sputtering. Subsequently， a ZnO UV photodetector with a high-gain metal-semiconductor-metal （MSM） structure was achieved. At a bias voltage of 10 V， the detector exhibited a responsivity of 4.90 A/W and an external quantum efficiency of 1668%. This high gain was attributed to the hole trapping at the semiconductor-metal interface under illumination. Furthermore， the modulation rules and influence mechanisms of gain effect， applied bias voltage， and depletion layer width on the responsivity of ZnO UV photodetector were thoroughly investigated. This research provides an important reference for the development and performance control of high-performance UV photodetectors.

关键词

ZnO紫外光电探测器响应度增益效应耗尽层

Keywords

ZnOultraviolet photodetectorresponsivitygain effectdepletion layer

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