Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors

CHEN Xing; CHENG Zhen; LIU Kewei; SHEN Dezhen

doi:10.37188/CJL.20230146

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Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors

Invited Paper | 更新时间：2023-08-02

- Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors
  增强出版
- Chinese Journal of Luminescence Vol. 44, Issue 7, Pages: 1167-1185(2023)
- 作者机构：
  
  1.中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室，吉林长春　130033
  2.中国科学院大学材料科学与光电工程研究中心，北京 100049
- 作者简介：
- 基金信息：
  
  the National Natural Science Foundation of China(62074148;61875194;11727902);The National Ten Thousand Talent Program for Young Top⁃notch Talents;The Key Research and Development Program of Changchun City(21ZY05);Jilin Province Science Fund(20220101053JC;20210101145JC);Jilin Province Young and Middle-Aged Science and Technology Innovation Leaders and Team Project(20220508153RC)
- DOI：10.37188/CJL.20230146
  CLC： O484.4;TN36
- Published：05 July 2023，
  
  Received：15 June 2023，
  
  Revised：02 July 2023，
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陈星,程祯,刘可为等.镓基氧化物薄膜日盲紫外探测器研究进展[J].发光学报,2023,44(07):1167-1185.

CHEN Xing,CHENG Zhen,LIU Kewei,et al.Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors[J].Chinese Journal of Luminescence,2023,44(07):1167-1185.
陈星,程祯,刘可为等.镓基氧化物薄膜日盲紫外探测器研究进展[J].发光学报,2023,44(07):1167-1185. DOI： 10.37188/CJL.20230146.

CHEN Xing,CHENG Zhen,LIU Kewei,et al.Research Progress in Gallium Based Oxide Thin Film Solar-blind Ultraviolet Photodetectors[J].Chinese Journal of Luminescence,2023,44(07):1167-1185. DOI： 10.37188/CJL.20230146.

摘要

日盲紫外探测器在国防和民用领域均具有广阔的应用前景。基于宽禁带半导体材料的日盲紫外探测器具有无需昂贵的滤光片、工作电压低、全固态、体积小、重量轻、抗干扰能力强、工作温度范围广等特点，是公认的新一代紫外探测器。在众多的宽禁带半导体材料中，以Ga

作为典型代表的镓基氧化物材料因其优异的电学和光电特性已经成为近年来微电子学和光电子学领域的研究热点，特别是其本征日盲、耐高温、耐高压、化学稳定性好等优异特点使得该类材料在日盲紫外光电探测领域展现出巨大的发展潜力。鉴于此，本文综述了不同晶体结构的Ga

、镓酸盐氧化物、镓锡氧化物、镓铝氧化物等镓基氧化物薄膜及其日盲紫外探测器研究进展。

Abstract

Solar-blind ultraviolet photodetectors have broad application prospects in the fields of national defense and civilian use. The solar-blind ultraviolet photodetectors based on wide bandgap semiconductor materials are recognized as new generation of ultraviolet detector with the characteristics of no expensive filter， low working voltage， all-solid-state， small size， light weight， strong anti-interference ability， and wide operating temperature range. Among these wide bandgap semiconductors， gallium containing oxides with Ga

as a typical representative have become research hotspot in the field of microelectronics and optoelectronics because of their excellent electrical and optoelectronic properties， especially their unique characteristics such as intrinsic solar-blind， high temperature resistance， high pressure resistance and good chemical stability， which makes such materials show great potential in the field of solar-blind ultraviolet photodetectors. In view of this， this article reviews the research progress in the past five years of gallium-based oxide films such as Ga

with different crystal structures， gallate oxide， gallium aluminum （or tin， indium） oxide and their solar blind ultraviolet detectors.

关键词

日盲紫外探测器Ga2O3镓基氧化物镓酸盐氧化物含镓三元合金氧化物

Keywords

solar-blindultraviolet photodetectorsgallium oxidegallium-based oxidegallate oxidegallium containing ternary oxides

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陈星（1984-），男，湖北荆门人，博士，研究员，博士生导师，2012年于中国科学院大连化学物理研究所获得博士学位，主要从事宽禁带半导体光电材料与器件方面的研究。. doi: 10.1007/s40843-021-1698-3http://dx.doi.org/10.1007/s40843-021-1698-3

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